【作者】 韩菲；

【导师】 李健；

【作者基本信息】 内蒙古大学 ， 物理电子学， 2006， 硕士

【摘要】 采用真空热蒸发法分别在玻璃、单晶硅(111)、(100)和二氧化硅片上制备CdO薄膜和稀土镝掺杂CdO薄膜并对薄膜进行热处理。对薄膜进行物相结构、表面形貌、电学、光学特性等测试，研究工艺条件、掺杂含量、不同衬底及热处理温度和时间等对CdO薄膜的晶相结构、晶粒尺寸、表面形貌、光学和电学特性等性质的影响。 实验显示：以高纯CdO粉末作为蒸发源，在不同衬底上生长的CdO薄膜，经不同工艺条件的热处理后，可获得性能良好的CdO薄膜。实验给出在玻璃衬底上制备的薄膜最佳热处理为T=550℃，t=20min；在硅及二氧化硅衬底制备的薄膜最佳热处理条件为：T=650℃，t=30min。XRD图给出制备的CdO薄膜均有沿(111)晶向择优生长的趋势，粒径尺寸较为均匀在32.57nm～67.93nm之间。 稀土Dy掺杂可促进CdO薄膜晶粒的生长，薄膜的平均粒径从未掺Dy时38.12nm变至48.49nm。SEM图给出薄膜表面平整、致密、颗粒均匀。经热处理后薄膜出现颗粒聚集现象，随热处理温度升高颗粒聚集更为明显。 随掺Dy含量的增加，CdO薄膜的性质发生变化，其中掺Dy含量为5at％的薄膜经热处理后显示出较好的性能。薄膜的薄层电阻总体来讲都较小(量级均在KΩ以内)，随掺Dy含量的增加薄膜的薄层电阻呈先升后降趋势。掺Dy和热处理可降低薄膜的薄层电阻，低掺杂对薄膜电阻影响不大，当掺Dy含量高于5at％时薄层电阻的变化趋势比较明显。能谱分析图初步显示CdO的化学计量比更多还原

【Abstract】 We prepare pure CdO and Dy-doping CdO thin films by vacuum evaporate-deposition on different substrates, such as glass, Si and SiO₂,furthermore take heat treatment the films. Then test the characteristics of films on structure, surface, electric conduction, optics property, etc.. So as to analyze the influences from the process conditions, contents of Dy, different substrates as well as heat treatment temperature and time on crystalline structure, crystalline grain dimension, optics and electrical characteristics of samples.The experiments shows that using the high pure CdO powder as evaporate source to prepare CdO thin films on different substrates and then oxidizing and heat treatment, can obtain the films with good performance. The experiment also shows that the best heat treatment condition of the samples on glass substrates is T=550 ℃, t =20min; And that on silicon and dioxide silicon substrates is T =650℃, t =30min. The samples all have a preferred orientation growing trend along （111） direction and uniform crystalline grain dimension. Dy-doping can influence the growth of crystalline grain and the average dimension of crystalline grain varies更多还原