【作者】 倪晟；

【导师】 孙卓；

【作者基本信息】 华东师范大学 ， 凝聚态物理， 2006， 硕士

【摘要】 使用磁控溅射技术制备了TiAlN薄膜和ZnO薄膜。通过改变溅射过程中Al的功率来制备了一系列Al含量不同的氮化钛铝(TiAlN)薄膜。在溅射过程，薄膜沉积速率和Al含量随Al的溅射功率增加而增大，而薄膜的粗糙度减小。Al含量较低时(约21％)，TiAlN薄膜的硬度和杨氏模量都高于TiN薄膜。而Al含量较高时(＞26％)，薄膜的硬度和杨氏模量也随含量增加而减小。 用不同的氧分压下使用直流溅射制备一系列的ZnO薄膜，发现当氧分压达到20％后薄膜的透明性较好。选取了氧分压20％、30％、50％、70％的四个样品进行了透射光谱测试和XRD测试。通过对透射光谱的分析得到各薄膜的色散关系，并通过单振子模型解释了不同薄膜色散关系的不同，发现E_d参量决定了折射率的不同，并通过对E_d的进一步分析得到实质上是β参量影响了其色散关系且β参量反应ZnO化学键的离子性。另发现采用直流反应溅射制备出具有较好光学透明性的具有纤锌矿结构(002)择优取向的ZnO薄膜。在氧分压达到30％后，Zn的氧化基本在靶表面就已完成，随着氧分压的增加，晶面间距和内应力也在逐渐增大。薄膜的晶粒尺寸大小除了受到内应力的影响外，还受到薄膜厚度等因素的影响。薄膜的带隙对晶粒大小具有明显的依赖性，而且随着晶粒的减小，带隙的变化具有明显的尺寸效应。更多还原

【Abstract】 The TiAlN films and ZnO films were deposited by a reactive magnetron sputtering system. The Al percentage in the TiAlN film changes with the Al sputtering power. The increase of Al sputtering power resulted in the increase of deposition rate and Al contents in the film, and the decrease of the film roughness. It was found that the hardness and elastic modulus of TiAlN film was higher than that of TiN film at low Al percentage (about 21%), but became lower at high Al percentage (>26%).ZnO films were deposited using different oxygen partial pressure. The transmission spectra of all films were analyzed. The refractive index dispersions of different films are different and the refractive index of the ZnO film has strongly dependence on the oxygen partial pressure. Such kind of difference could be explained by Single electronic oscillator model. By using this model, different Ed could be found as the reason of causing different refractive index dispersion. Because of E_d = βN_cZ_aN_e, N_c is the coordination number of the cation nearest neighbor to the anion, Z_a is the formal chemical valency of the anion, and N_e is the total number of valence electrons per anion, so β determined E_d value in the same material. The different β means different chemical bond condition. Furthermore , XRD show that all ZnO samples are all (002)-oriented, but the diffraction peaks were not very symmetrical. Film internal stress could be the reason of the asymmetrical. The interplaner spacing could be calculated by using the diffraction peak position and the spacing increased when the oxygen percentage increased. At last, the analysis of the film properties show that the band gap of the ZnO film are relation to the grain size. Both the film thickness and internal stress affected the grain size.更多还原