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基于BICMOS工艺的高性能基准电压源研究

A High Performance Voltage Reference Based on BICMOS Technology

【作者】 赵芳兰

【导师】 冯全源;

【作者基本信息】 西南交通大学 , 通信与信息系统, 2006, 硕士

【摘要】 所有电气或电子设备都需要电源来维持正常工作,对供电电压都有一定的要求。因此根据不同的要求,人们先后研制出各种各样的稳压电源,从比较早的串联型稳压电源到如今广泛应用的开关电源。便携式产品一直都是电源管理芯片主要的应用领域之一,近几年,该类产品发展迅速,便携式电子产品的升级,必然使得其对电源管理芯片提出更高的要求。随着半导体技术的不断发展,高效、低功耗、低电压、高精度、低噪声、高集成的电源管理芯片成为未来的发展趋势。 本论文对当今最流行的电源管理芯片中的最重要的模块单元基准电压源进行了深入的研究,设计出了适合于电源管理芯片中的带隙基准电压源,该研究成果得到了国家自然科学基金和四川省学术带头人基金的资助。 温度无关性和电压稳定性是基准电压源的重要指标,直接影响电源管理芯片输出电压的稳定性及各项性能指标。本文在分析了带隙基准电压源的基本原理后,介绍了目前带隙基准的研究进展,总结了目前几种电路结构的优缺点。在比较了各种常用的带隙基准电压源结构的基础上,针对电源芯片的性能要求提出基准电路的主要设计指标,并据此设计出了高性能的带隙基准电路。 本文主要贡献在于论文设计了一个运用0.6um BICMOS工艺实现的带隙基准电压源,由于避免了使用运算放大器,消除了运放失调电压产生的温漂,使基准具有低温度系数,而且通过加入共栅极管提高电源抑制比,在加入补偿电容实现宽频带内高电源抑制比和低噪声的同时,设计了精确控制的补偿电容充电电路保证了基准电路在较短的时间内启动。

【Abstract】 All electrical equipments require power supply to keep normal operation. According to different requirements of equipments, all sorts of power supply were developed successively from early linear regulator to present switching regulator. Power management ICs are always applicable in portable products. In recent years, this kind of products makes tracks with high productivity, new function and high quality, and it is inevitable to present more demands. With the upgrade of portable products and development of semiconductor technology, power management ICs trend to high efficiency, low power, low voltage, high precision, low noise and high integrated in the future.This thesis delves into voltage reference which is a significant block cell of the most popular power management ICs, and designs a bandgap reference applicable to power management IC. The research produce is supported by National Science Foundation of China and Sichuan Province Academic and Technologic Leaders Foundation.Temperature independence and high stability of output voltage are essential characteristics, which can influence on stability of output voltage and other performance indexes of power management IC. The thesis analyzes the basic theory of bandgap reference, presents an introduction to academic studies condition on it and then gives a summary of advantage and disadvantage in several circuit structures. On the basis of comparing some popular structures of bandgap reference, we have successfully designed a high performance bandgap voltage reference satisfying main performance indexes which are required by power management IC.The main contributions lie with designing a bandgap reference based on 0.6 um BICMOS technology which is characteristic of low temperature coefficient and high power supply rejection ratio over wide band. The object of low temperature coefficient is realized by avoiding operational amplifier to eliminate temperature drift due to operational amplifier offset. By using common-gate MOS transistor and compensation capacitor, high power supply rejection ratioover wide band and low noise are achieved. A long start-up time is avoided by designing a charge circuit which is controlled accurately for compensation capacitor.

  • 【分类号】TN432
  • 【被引频次】9
  • 【下载频次】455
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