【作者】 王释伟；

【导师】 王铁山；

【作者基本信息】 兰州大学 ， 原子与分子物理， 2006， 硕士

【摘要】 PIN型硅半导体探测器以其优异的抗辐照性能在核物理实验研究中具有广泛的应用。但所有半导体探测器在受高能粒子辐射时,都会在半导体材料中产生各种辐射损伤缺陷,对探测器的性能产生不利的影响,如:分辨率下降,正反向电阻的下降,漏电流增大,非线性度增加等。 本文主要针对一种新型的PIN硅半导体探测器的相关物理性质开展一系列理论和实验的研究。实验研究了各种粒子对半导体探测器的辐射损伤机理;讨论了辐射损伤的微观缺陷影响探测器宏观的电参数的机理;并通过实验研究了在不同能量质子辐照下,探测器的分辨率等性能随注入剂量的变化趋势。由于该探测器主要被用于测量快中子反冲质子能谱,因此本文主要研究了质子辐照对探测器的基本性能的影响。实验发现,该种PIN探测器在测量低能和较高能质子时,可承受的累积辐照剂量分别约为5×101¹⁰p/cm²和7.2×10⁹p/cm²,超过这个剂量,探测器性能迅速变坏;并且该PIN探测器结区的抗质子辐照性能远小于补偿区。更多还原

【Abstract】 PIN silicon detectors have a lot of good properties, and are often used in nuclear physical experiments. But all kinds of radiation damage defects may be induced while the semi-conduct detectors are radiated by high energy particles, which cause negative influences to the detectors, for example, the resolution will turn bad, the forward and backward electric resistances will fall down, the leakage currents will increase, and non-linearity will increase.A new type of PIN silicon semi-conduct detector was studied in this paper. The radiation damage mechanics of semi-conduct materials under all kinds of particles was investigated. It was also studied how the micro-defects of radiation damage affect electrical parameters of the detectors, and how the resolution change with the radiation dose under the radiation of different energies protons. Because this PIN detector is mainly used to measure the proton-recoil spectrum of fast neutron, the influence of proton radiation to the detector properties was studied mostly. It was found the total radiation doses under low and higher energies protons were 5×10p/cm~2 and 7.2×l0~9p/cm~2, while the PIN detector turned bad, and the resistance of proton radiation of the junctions was inferior to the compensating parts.更多还原