【作者】 张凡；

【导师】 刘铁根；

【作者基本信息】 天津大学 ， 光学工程， 2005， 硕士

【摘要】 光学频率上转换(下转换)材料作为一种新型防伪材料具有良好的隐秘性、转换波长具有唯一性,而且还有使用寿命长、材料制备难度高等特点,所以可以作为高级防伪标记应用于金融证券和有效票证中。针对光学频率上转换(下转换)材料开发出一套有效、准确、快速的机读检测设备对于实现这一防伪功能起着极为重要的作用,而且具有很高应用价值。鉴于分立器件检测系统存在的不足和缺陷,本文设计出一种新型的用于特种检测的光电集成器件,并对其中的核心器件——980nm量子阱半导体激光器的结构进行研究,使之能够达到微温升、高峰值功率的要求。具体工作如下: 1.确定用于特种检测的光电集成器件的集成方式为基于平面光波回路的混合集成; 检测方式为透射式方案。2.利用光学系统模型设计软件对整个系统进行结构设计,给出设计模型,对该模型进行空间光线追迹,并进行系统光强分布、传递的分析。3.对光电集成检测芯片的核心器件——光谱发射芯片应用的量子阱结构及其关键参数从理论上进行探讨,在此基础上提出器件的工作方式,确定器件具体结构和所使用的材料系统。4.利用专业设计软件确定光谱发射芯片的各层生长厚度,对器件关键结构参数进行优化,从而得出具体的器件模型,最后给出该模型的关键参数的仿真模拟结果。更多还原

【Abstract】 Being a new type anti-counterfeit material, optical frequency upconversion (downconversion) material has very good privacy and the converted optical wavelength is unique. In addition, the material itself is hard to fabricate and also has a long life. All these characteristics make optical frequency upconversion (downconversion) material an ideal one to add on security documents as well as banknotes as advanced anti-counterfeit features. Thus, a machine-readable detection equipment to detect and recognize such anti-counterfeit features with high efficiency and accuracy is badly needed, for the detection equipment has a promising future for application and determines whether the material can be used as the anti-counterfeit features or not. Since the separated detection system has many disadvantages and drawbacks, a new type optoelectronic integrated chip for the special detecting purpose is designed in this paper and the structure of its key device – a 980nm quantum well laser diode is thoroughly studied, so as to meet the device’s demands of little temperature increase and high peak power output. The work has been done as follows: (1) Hybrid integration based on PLC is used for the integration method of the special detecting purpose optoelectronic integration device, and light transmission method is used for the detection means. (2) Optical system modeling software is used to design the layout of the whole system, and the system model is given. Based on the model, spatial light tracing is finished and the light distribution and transmission of the system are analyzed. (3) For the key component of the special detecting purpose optoelectronic integration device -a light emitting chip, the quantum well structure and its important parameters are theoretically discussed, based on which, the modulation method of the device is put forward, the detailed structure and the material system are determined. (4) With the help of professional design software, the thickness of the device’s layers is determined, the device’s important parameters are optimized, and, therefore, the structure model of the device is obtained. Finally, based on the model, the simulation results of the device’s important parameters are presented.更多还原