【作者】 赵丽娜；

【导师】 季振国；

【作者基本信息】 浙江大学 ， 材料物理与化学， 2006， 硕士

【摘要】 随着半导体技术发展,宽禁带p型透明导电薄膜已成为半导体材料研究的热点之一。SnO₂作为一种宽禁带（E_g=3.6-4.0eV）半导体材料,以其优异的电学性能、光学性能和化学稳定性被广泛应用于高温电子器件、透明导电电极等领域。如太阳能电池,液晶显示器,光探测器,窗口涂层等领域。至今为止,对SnO₂的研究主要集中在低电阻高透射率的n型透明导电特性及应用方面,但对p型导电的SnO₂透明导电薄膜的研究少有报道。本实验室曾经采用溶胶-凝胶法成功制备了p型的掺铟二氧化锡透明导电薄膜。但溶胶—凝胶法制备的薄膜质量不理想,需要进一步提高薄膜的质量及其性能。 本文重点阐述了喷雾热解法制备了p型掺铟氧化锡透明导电薄膜的工艺及性能;并且综合介绍了制备SnO₂薄膜的各种工艺过程及其优缺点。概述了目前SnO₂薄膜的研究状况及其发展前景,以及本文采用喷雾热解法的目的。本文主要从以下几个方面对P型SnO₂做了研究:1)掺杂元素含量（铟,镓）对薄膜的晶体结构、导电类型和载流子浓度以及光吸收特性等性能的影响;2)热处理温度制度对以上薄膜性能的影响。 研究结果表明,1)当In/Sn具有合适比时,在合适的热处理温度下,薄膜具有空穴（p型）导电特征,且保持金红石结构;In/Sn比例过低（<0.06）,由于本征缺陷,其多数载流子为电子,在自补偿效应下,薄膜仍为电子导电;比例过高（>0.25）,薄膜显示类似于ITO薄膜电子导电特征。对于In/Sn=0.2的薄膜,但当热处理温度高于550℃时,薄膜为p型导电;在温度到达700℃时,薄膜中空穴浓度达到饱和数值为4×10¹⁸cm^-3。与此同时,透射率在可见光范围内仍高达80%以上,电导率为1.49q×10¹⁶Ω^-1cm^-1,但由于杂质引起的晶格畸变,导致薄膜的电子迁移率较低为0.00372cm²V^-1s^-1;2)铟镓共掺的SnO₂:（In,Ga）导电薄膜从晶体结构上减少了晶格畸变效益,提高了载流子的迁移率,电导率得到提高。对In_0.1Ga_0.1SnOy而言,载流子浓度为+9.5×10¹⁷cm^-3,迁移率39.2cm²V^-1s^-1,电导率达3.72q×10¹⁹Ω^-1cm^-1。更多还原

【Abstract】 With the development of semiconductor technology, wide band-gap semiconductor materials have been a researched hotspot, attracting many researchers’ interest. Tin oxide, as a wide band-gap material, has been widely used in many fields, such as opto-electric devices, high temperature devices, LCD, solar cell, and window coating and so on, for its good properties. Up to now, most researches and applications are based on its n type conducting character, and its low resistance properties. According to our knowledge, few papers and application have been published about SnO₂ based on its p type conducting character. Our group once reported p-type SnO₂ thin films deposited by sol-gel method. It has low mobility, low conducting and films easily to be cracked. To improve these shortcomings, in this paper, spraying pyrolysis has been used to prepare p-type SnO₂ films.In detail, Indium doped SnO₂ films and Indium and Gallium co-doped SnO₂ films were prepared and characterized. Results show that: 1) p-type SnO₂ can be available when the In/Sn ratio is appropriate annealed above 550℃. In this paper, the optimized In/Sn ratio is in the range of 0.06-0.2. The carrier concentration can be up to4×10¹⁸cm^-3 with mobility 0.00732 cm²V^-1s^-1, for In_0.2SnO_x films annealed at 700℃. The mobility is too low because of crystal lattice distortion caused by dopants. The conductance is about 1.49q×10¹⁶Ω^-1cm^-1. 2) Indium and Gallium co-doped SnO₂ films can improve carrier mobility with a little effect on carrier concentration. For In_0.1Sn_0.1O_y films, its carrier concentration is up to +9.5×10¹⁷ cm^-3, with carrier mobility up to 39.2 cm²V^-1s^-1 annealed at 500℃ Compared to the In_0.2SnO_x, the conductance of In_0.1Sn_0.1O_y is up to 3.72q×10¹⁹Ω^-1cm^-1.更多还原