【作者】 刘怡；

【导师】 黄君凯；

【作者基本信息】 暨南大学 ， 通信与信息系统， 2005， 硕士

【摘要】 Flash存储器具有存储密度高、结构简单和高速电可擦除性等优点,是当今极具发展前景的非挥发性存储器件。二十年来,闪存的研究不断朝着低压、低功耗和高密度、高可靠性的的方向发展。而单管多位存储方式的提出,大大提高了SONOS结构器件的存储效率,有效的降低了器件的工作电压,进而增强了器件的可靠性。 本文首次将单管多位技术应用于MNOS器件,提出以双层结构氮化硅作为阻挡层的MNOS结构取代传统的SONOS介质结构。通过对器件单元结构、操作模式、擦写特性、读取特性和可靠性等方面的研究,利用仿真软件确定了单管多位MNOS存储器的结构参数和工作参数。研究表明,MNOS结构器件在沟道长度为0.3μm的情况下基本能够达到SONOS结构器件的性能指标,从而为Flash存储器件的发展提供了一种新的选择。更多还原

【Abstract】 Flash memory is one kind of nonvolatile memories with brilliant development prospective because of its high storage density,simple structure and high speed electrically erasable characteristic. During the last two decades, the purpose of the studies in flash memory is to achieve lower driving voltage and power consumption, higher storage density and reliability. Since the technology of Multi-bit in one cell was advanced, it has greatly improved the storage efficiency of device with SONOS structure, effectively decreaced the driving voltage and increased the reliability of the device.In this paper, the technology Multi-bit in one cell is used in MNOS devices for the first time and a new MNOS structure using Si₃N₄ as blocking layer is advanced to replace conventional SONOS medium structure. Through the studies in cell structure, operation mode, electrically erasable characteristic, read & write characteristic, and reliability o f the devices ,the structure parameters of 2-bit MNOS memories and its working parameters are determined by taking advantage of simulation software .The results show that, when its channel length is set to 0.3 μ m, the devices of MNOS structure can basically reach the performance index of devices with SONOS structure. Therefore, a new choice is presented to support the development of flash memories.更多还原