【作者】 陈少强；

【导师】 朱自强；

【作者基本信息】 华东师范大学 ， 微电子学与固体电子学， 2005， 硕士

【摘要】 当小颗粒尺寸进入纳米量级的时候(1～100nm),其本身具有量子尺寸效应、介电限域效应、表面效应、和宏观量子效应,因而展现出许多特有的性质,在声、光、电、磁以及生物等方面有广阔的应用前景,同时也将推动基础研究的发展。 本论文用电化学方法制备出多孔硅和纳米单晶硅,用热蒸发技术制各了四角状和线性一维ZnO纳米结构,用溶胶凝胶法制备出纳米氧化锌/多孔硅复合薄膜以及纳米羟基磷酸钙/多孔硅复合薄膜,并对各种制备方法进行了详细的研究。对所得的纳米结构进行了表征。主要研究内容如下: 1 系统研究了P型多孔硅、纳米硅和N型多孔硅的电化学制备条件,分析了腐蚀条件对多孔硅薄膜的微观结构的影响。 2 应用离子注入技术在硅衬底上局部形成高阻或低阻区,进而形成图形化的多孔硅阵列。同时对多孔硅在基因芯片中的应用也做了初步的研究。 3 以溶胶-凝胶法成功制得羟基磷酸钙(HAP),并实现了厚度约20μm HAP溶胶在多孔硅衬底上的涂布。发现热处理可提高HAP的晶格完整性。850—950℃热处理大大提高了HAP与多孔硅之间的粘附性。为传感器及集成电路植入人体、减少甚至完全避免生物排异奠定了基础。 4 分别用热蒸发法和溶胶凝胶法在多孔硅衬底上制备了ZnO纳米材料。用SEM和XRD对制备的ZnO做了比较分析。分析了热蒸发技术条件对ZnO纳米结构的影响。研究了用溶胶凝胶法制备纳米氧化锌的时候,退火温度,衬底等参数对氧化锌的影响。更多还原

【Abstract】 As the size of particles comes into nanometers, many new characteristics of the nano-sized particles will come out according to the nano-effects such as Small size effect, Surface and interface effect, quantum size effect, and the quantum confinement effect. These effects make the nano materials an expansive application potential in Photonics, Electronics, Magnetics and Bio-chemistry and et al. and also will promote the basic research to a deep development.In this Master degree thesis, fabrication of Nano-structured Porous Silicon films and Si Nano-crystalline(SiNC) films by electro-chemical method is discussed; its applications in the Sol-Gel process of Nano-crystalline Znic Oxide and Hydroxyapatite thin films are studied. Furthermore, fabrication and characterization of ZnO nano-structure obtained by thermal evaporation are studied experimentally. The mainly works and significant results are listed as following:1) The parameters of forming P-type Porous Silicon, Nano-structured Porous Silicon film and N-type Porous Silicon films by electro-chemical method are studied systematically.2) Selectively formation of porous silicon array using highly resistive silicon layer as masking materials and boron ion implantation are obtained. The application of porous silicon in DNA-chip is also studied.3) HAP has been successfully prepared by sol-gel method. HAP(20 μ m) was successfully coated on PS substrate. It was found that rapid thermal annealing (RTA) process is able to enhance crystallinity of HAP. And 850-950 °C is the best thermal treatment temperature. HAP on Silicon will benefit implantation of sensors and IC in human bodies so as to reduce and even entirely avoid biological rejection.4) Sol-Gel process of Nano-crystalline Znic Oxide thin films on nano structured silicon substrates are studied. ZnO nanostructures are also successfully synthesized by a novel thermal evaporation method. The obtained ZnO samples were characterized by XRD and SEM. The mechanics of ZnO growth by evaporation is discussed. The effect of the annealing temperature on the crystallization of ZnO in the sol-gel process is disscused at the same time and the optimal annealing temperature are measured.更多还原