【作者】 季红；

【导师】 姜宏伟；

【作者基本信息】 首都师范大学 ， 光学， 2005， 硕士

【摘要】 本文研究了缓冲层和退火工艺对Ni₇₄Co₂₆薄膜AMR的影响,就不同缓冲层和不同温度退火后NiCo薄膜AMR值的变化做出了比较和分析,为较薄NiCo薄膜的AMR值的提高和实际应用提供了参考数据。取得的结果可归纳如下: （1） 制备了(Ni₈₁Fe₁₉)₆₆Cr₃₄（xnm）/Ni74Co^20nm薄膜,考察了缓冲层厚度对薄膜的影响。结果表明随着NiFeCr缓冲层增厚,NiCo薄膜AMR值增加,当缓冲层厚度达到5nm时其AMR值达到最大,而后NiCo薄膜AMR值随着缓冲层厚度的增大开始减小,当缓冲层厚度超过9nm后,薄膜AMR值迅速减小。 （2） 制备了NiFeCr（5nm）/NiCo（xnm）/Ta（3nm）;Ta（5nm）/NiCo（xnm）/Ta（3nm）两组样品,比较了NiFeCr和Ta做缓冲层对NiCo薄膜各向异性磁电阻的影响。结果表明无论用NiFeCr还是Ta做缓冲层,NiCo薄膜的各向异性磁电阻都随着NiCo薄膜厚度的减小而下降。用NiFeCr做缓冲层的NiCo薄膜,其AMR值比用Ta做缓冲层的同样厚度NiCo薄膜的AMR值有明显增加。例如,用Ta做缓冲层的10nm的NiCo薄膜的AMR值为1.6%,而用NiFeCr做缓冲层的同样厚度10nm的NiCo薄膜的AMR值为2.6%,提高了50%。 （3） 对NiFeCr（5nm）/NiCo（20nm）/Ta（3nm）;Ta（5nm）/NiCo（20nm）/Ta（3nm）样品在真空炉中进行了2小时200℃、300℃、400℃不同温度退火,在200℃退火后NiCo薄膜AMR值约有30%的提高,但随温度的继续升高AMR值急剧下降。 （4） X射线衍射结果表明不论哪个温度退火薄膜织构都得到了改善,但NiCo薄膜AMR值却在温度超过200℃后下降很快,小于制备态各向异性磁电阻。这主要是由于扩散引起,随着温度升高饱和磁矩M_s减小,矫顽力H_C增加。更多还原

【Abstract】 The Ni74Co26 films were prepared by using DC magnetron sputtering, the structural and magnetic properties were studied systematically in thesis.The major results obtained are summarized as follows.(1) ( Ni81Fe19)66Cr34(xnm)/ Ni74Co26(20nm) film have been prepared and the effect of (Ni81Fe19 ) 66Cr34 buffer layer thickness on the properties of the films has been studied.The results show that the AMR value of the film reaches a maximum value at x=5nm,then decreases with x increases, at x>9nm,the value decreases rapidly.( 2 ) The AMR value of the Ni74Co26 deposited on 5nm (Ni81Fe19)66Cr34 buffer layer is higher than that of the films deposited on 5nm Ta buffer layer .For example, the AMR value of the 10nm Ni74Co26 deposited on (Ni81Fe19)66Cr34 buffer layer is 2.6%, the AMR value of the Ni74Co26 deposited on Ta buffer layer is 1.6%.(3) Samples were annealed under different TA CTa=200℃、 300℃、 400℃),the result indicates that the value of AMR reachs its maximum at 200℃, approximately enhance 30%,then the value decrease dramatically when the temperature exceed 200℃.(4) Texture of Ni74Co26 films were improved no matter which temperature after annealed, however the AMR value decrease dramatically when the temperature exceed 200℃,less than deposit film AMR value. The interdiffusion increases with T,resulting in lower Ms and higher Hc.更多还原