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Yb:Er共掺Al2O3光波导放大器制备工艺及非均匀掺铒光波导理论设计
Fabrication Technique of Yb: Er co-doped Al2O3 Waveguide Amplifiers, Theoretical Design of Non-uniform Er Doped Waveguide Amplifier
【作者】 宋琦;
【导师】 宋昌烈;
【作者基本信息】 大连理工大学 , 光学工程, 2005, 硕士
【摘要】 分别利用中频磁控溅射(MFS)方法和微波电子回旋共振(ECR-MW)等离子体方法制备了Yb:Er共掺Al2O3薄膜,研究了氧气与氩气比例、样品荧光谱强度、最佳Yb:Er比例、最佳退火温度、样品表面形貌等性质。得到MFS方法制备的样品在氧气25-45sccm,氩气70sccm,退火温度850℃条件下,最佳Yb:Er比例为9:1;ECR-MW方法制备的薄膜样品在氧气、氩气各为20sccm,退火温度900℃条件下,最佳Yb:Er比例为5:1。 利用等离子体干刻的方法对制备的薄膜进行了刻蚀,形成了脊型波导。基于MFS方法刻蚀的波导脊宽4μm,脊高1.0-1.2μm。基于ECR-MW方法刻蚀的波导脊宽4μm,脊高0.4-0.6μm。用自行设计的波导增益测量系统对波导放大器进行了测量:MFS波导在15mm的长度上获得了7.826dB,单位长度增益为5.217dB/cm。ECR-MW波导在15mm的长度上获得了2.385dB,单位长度增益为1.59dB。实验中发现在相同的泵浦功率下,脊型波导比平板波导输出增益高。 提出了纵向非均匀掺杂光波导放大器的概念。建立了一套包括了铒离子的个6能级和镱离子的2能级,考虑了合作上转换、交叉弛豫、激发态吸收等非线性效应的速率方程,并利用自适应方法分别就掺Er和Yb:Er共掺光波导放大器求解了两种纵向浓度分布,分别得到了2.25%和7.26%的增益改善。利用激光退火方法对掺Er:Al2O3薄膜进行了处理,并改善了退火工艺。提出了利用激光退火工艺制备非均匀Er掺杂的方法。实验中获得的激光退火样品荧光谱强度为热退火样品最大强度的47倍。
【Abstract】 Yb:Erco-doped Al2O3 thin films have been prepared by Middle frequency sputtering (MFS)and microwave electron cyclotron resonance plasma plasma source (ECR-MW). Ratio of O2 and Ar, photolumiscence intensity, optimal ratio of Yb:Er, optimal annealing temperature, topograph of sample have been studied. Optimal optical property of sample fabricated by MFS has been achieved at O2 25-45sccm, Ar 70sccm, under 850℃ annealed, and ratio of Yb:Er 9:1; Optimal optical property of sample fabricated by MFS has been achieved at O2 20sccm, Ar 20sccm, under 900℃ annealed, and ratio of Yb:Er 5:1.Rib-waveguides have been developed based on thin films employing plasma etching. Width of rib waveguides prepared by MFS is 4μm, height of waveguide is 1.0-1.2μm. Width of rib waveguides prepared by ECR-MW is 4μm, height of waveguide is 0.4-0.6μm. Gain of waveguide has been measured by designed opto-electric system: 7.826dB is obtained from 15mm waveguide prepared MFS, the average gain 5.217dB/cm; 2.385dB is obtained from 15mm waveguide prepared ECR-MW, the average gain 1.59dB/cm. Under same pump powers, gain output of rib-waveguide is high than that of planar waveguide.Non-uniform doped waveguide amplifiers are proposed. 6 Er energy levels and 2 Yb energy levels are included and cooperative upconversion, cross relaxation, excited state absorption are involved. Non-uniform Er and Yb:Er co-doped waveguide are designed based on two kinds of ions concentration by self-adapted method, and 2.25% and 7.26% improvements have been achieved. Laser annealing treatment has been proposed for Er:Al2O3. Details about experiment are improved, and PL intensity of Laser annealing is 47 times higher than 900°C heat treatment. Laser annealing is supposed to be applied to non-uniform EDWA and YEDWA.
- 【网络出版投稿人】 大连理工大学 【网络出版年期】2005年 04期
- 【分类号】TN252;TN722
- 【被引频次】5
- 【下载频次】192