【作者】 刘芳；

【导师】 张玉明；

【作者基本信息】 西安电子科技大学 ， 微电子学与固体电子学， 2005， 硕士

【摘要】 本文对碳化硅离子注入和欧姆接触的特性进行了深入的研究，分析了不同晶型和沟道效应对于离子注入结果的影响，分别给出了蒙特卡罗模拟软件TRIM对P、N、Al离子注入SiC中杂质浓度分布的模拟结果，该结果给出了离子注入实验中的注入能量和剂量值。研究了TRIM模拟的结果和实验值之间存在的差异，发现可以用PearsonⅣ型函数对TRIM模拟的结果进行修正，能适当的解决沟道效应的影响。研究了获得低阻高稳定性的欧姆接触的方法和途径。分别提出n型和p型SiC欧姆接触的形成机理能带模型，给出了选用适当欧姆接触金属的方法，讨论了欧姆接触稳定性，研究了制备良好欧姆特性的欧姆接触工艺条件。为了减少工艺难度，研究了同时制作n型和p型SiC欧姆接触的可行性，为以后改进工艺提供了依据。设计出制备高性能欧姆接触的工艺流程，讨论了制备中可能遇到的问题并提出了解决方法并进行了实验流片。本文的工作不仅对碳化硅离子注入模拟方法提出了新的思路和见解，而且还提出了说明SiC欧姆接触的形成机理的能带模型并给出了优化工艺流程，为进一步开发碳化硅材料欧姆接触的实现工艺打下了良好的基础。更多还原

【Abstract】 In the paper, the characteristics of ion implantation and ohmic contact of SiC are deeply investigated. The influence of different polytypes of SiC and channeling effect on ion implantation are considered. The concentration distribution results of the P, N, Al implanting into SiC are given by TRIM, which is useful to implantation energies and doses in the experiment. Comparing the simulation of TRIM with the experiment value and finding their difference, modifying the TRIM result by function of PearsonIV to solve the influence of the channeling effect.To investigate the ohmic contact of low resistance and high stability, the energy band models of n- and p-type SiC ohmic contact formation mechanism are put forward. The choice of proper contact metal and the stability of contact are discussed. To improve the processing flow, the ohmic contact is optimized on the basis of the processing flow and the possibility of n- and p-type SiC ohmic contact in a flow is studied.The ion implantation optimum processing is founded according to large numbers of literatures and domestic processing condition. The problems happened in the experiment and solving methods are put forward, the experiment is processing.In this paper, some new ideas and techniques for silicon carbide simulation of ion implantation are proposed. The results of our study provide important formation mechanism of ohmic contact and confirm the theoretical foundation of silicon carbide process for the further development.更多还原