【作者】 张立江；

【导师】 罗毅；

【作者基本信息】 清华大学 ， 电子科学与技术， 2004， 硕士

【摘要】 本论文对InP基高速单片光子集成器件制作中的若干关键工艺进行了研究,重点研究了端面减反射镀膜工艺与面向高速封装的微波过渡热沉制作。论文首先尝试了一种适合于局域网和城域网使用的新型低成本集成光源。该集成光源基于同一外延结构,并引入可饱和吸收体以实现FP激光器激射波长与调制器激子吸收峰之间的波长匹配。论文采用干法刻蚀技术对新型集成光源进行了制作,在此基础上对器件特性进行了评测,并对影响器件特性的因素进行了分析。端面抗反射镀膜技术对提高单片光子集成器件的性能有着重要的意义,特别是对超辐射发光二极管、DFB激光器/EA调制器集成光源等器件。因此本论文对半导体器件的端面镀膜技术进行了研究,并利用PECVD设备开发了一套工艺简单的低成本端面减反射镀膜技术,成功获得了6.8×10-4的低残余反射率,并具有良好的可重复性。良好的封装技术能够使集成器件具有更好的性能,并最终走向实用化、产业化。因此本论文对DFB激光器/高速EA调制器集成光源的封装技术进行了研究。在实验室现有的过渡热沉制作工艺基础上,对微波匹配电阻的制作工艺进行了改进,并最终获得了特性良好、阻值容易控制的薄膜电阻。在直到40 GHz的频率范围内,其微波反射特性曲线平坦,反射系数均在(16 dB以下。同时,采用电镀的方法在微波过渡热沉上制作了Pb/Sn焊料区,以便于进行集成器件管芯的焊接。在以上工作的基础上,论文采用改进的过渡热沉对DFB激光器/高速EA调制器集成光源管芯进行了封装,并对封装后的器件进行了测试。实验结果表明,过渡热沉具有良好的散热效果,可以保证集成器件实现直流模式下正常工作。同时,薄膜电阻对微波调制信号的匹配也有极大的改善。更多还原

【Abstract】 The thesis is focused on the key fabrication technologies of InP-based high-speed monolithic integrated photonic devices, especially antireflection (AR) coating and microwave submount for the packaging of high-speed photonic devices.Firstly, we designed and fabricated a low cost integrated light source for local area network (LAN) and metropolitan area network (MAN) applications. The integrated light source is based on identical-epitaxial-layer (IEL) integration scheme, and a saturable absorber is used to realize wavelength compatibility between the F-P laser section and the EA modulator section. Dry etching technology was adopted for the fabrication of the integrated device. The fabricated device was tested and the factors that influence the device performance were discussed.In order to improve the performance of integrated devices, especially for super luminescent device and DFB laser/EA modulator integrated device, we have developed a very efficient coating process to realize AR coating of device facets using plasma enhanced chemical vapor deposition (PECVD). AR coating with residual reflectivity of 6.8(10(4 has been demonstrated with SiNx film deposited by PECVD. For the practical application and industrialization of the integrated devices, we have studied the packaging technologies of DFB laser/EA modulator integrated light sources. By improving the fabrication procedure of the thin film resistor, we have demonstrated microwave submount with a flat reflection response and a reflection coefficient below (16dB up to 40 GHz. Meanwhile, Pb/Sn solder bumps have been formed on the submounts to facilitate the die bonding of the integrated devices.Based on the above work, we tested the performance of DFB laser/EA <WP=5>modulator integrated devices mounted unto the microwave submount with impedance matching network. The results indicate that heat dissipation is very efficient and CW operation of the integrated devices can be ensured. Meanwhile, the thin film resistor is found to have greatly improved the impedance matching of the microwave signal.更多还原