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二维电子气深度对一维电子通道中声电电流的影响

The Effect on the Acoustoelectric Current in One-Dimensional Channel by the Depth of the Two-Dimentional Electron Gas in the Heterostructure

【作者】 盛钢

【导师】 高洁;

【作者基本信息】 四川大学 , 凝聚态物理, 2004, 硕士

【摘要】 高频表面声波(SAW)驱动下的单电子输运问题的研究对物理学的基础理论、半导体器件的进一步发展和计量学的研究具有重要意义。本文在已有理论模型的基础上,着重研究了二维电子气(2DEG)深度对声电电流量子化特性的影响,得到了若干创新性的结果:推广了在不考虑2DEG深度情况下参数(的定义,提出了一个函数关系作为声电电流量子化特性的分析公式,得到了求解一维薛定谔方程的数值解的程序和对量子化声电电流有益的二维电子气的最佳深度区间,计算结果与实验结果一致。这些结果对研制表面声波驱动单电子输运器件,特别是器件所需的GaAs/AlxGa1-xAs压电异质结中二维电子气的深度提供了有益的参考和指导。在前三章中,首先介绍了半导体、异质结、二维电子气、表面声波、叉指换能器和压电效应等在该研究领域中的基本概念。接着,阐述了GaAs/AlxGa1-xAs异质结中2DEG的产生机理和准一维电子通道的形成机理。最后,综述了这一研究领域的最新进展及所采用的方法原理。在第四章中,在分析了计入和不计入屏蔽效应两种情况下SAW产生的压电运动电势和运动势之后,着重讨论了2DEG深度对声电电流量子化特性的影响。在第五章中,给出了本文研究的结论,并对这一领域的研究和应用前景进行了展望。

【Abstract】 The study on single electron transportation induced by a high frequence surface acoustic wave (SAW) has important influence on the base theory of Physics, further development of semiconductor devices and the research of metrology. Based on the theory model on hand, we emphasize to discuss the effect on acoustoeletric current caused by the depth of the two-dimentional electron gas (2DEG) in the heterostructure and acquire some innovative results. We extend the definition of parameter ( on the condition that the depth of 2DEG is not considered. We put forward an expression as an analytical formula on quantum trait of acoustoeletric current. We compile a program to get numerical value solution of the Schrodinger Equation. We acquire the best depth range of 2DEG that is good to the quantum trait of acoustoeletric current. All things prove that the results above have an agreement with experiments and give actual work some helpful directions. From Chapter 1 to Chapter 3, we first introduce semiconductor, heterostructure, 2DEG, SAW, interdigital transducer (IDT), piezoelectric effect and so on which are basic concepts in this research field. Next, we discuss the issue that how to get 2DEG in the GaAs/AlxGa1-xAs heterostructure and how to creat quasi- <WP=6>one-dimensional electron channel. Finally, we describe the lastest progress and method in this research field.In Chapter 4, after analying the piezoelectric potential and potential accompanying a SAW in the condition of screening effect and no screening effect, we emphasize to discuss the effect on acoustoeletric current caused by the depth of the 2DEG in the heterostructure. Chapter 5 gives the research result of this paper and looks into the distance of this field in research and application aspect.

  • 【网络出版投稿人】 四川大学
  • 【网络出版年期】2005年 01期
  • 【分类号】O441
  • 【下载频次】110
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