【作者】 李群；

【导师】 吴雪梅； 诸葛兰剑；

【作者基本信息】 苏州大学 ， 材料物理与化学， 2004， 硕士

【摘要】 本论文采用双离子束溅射沉积方法制备了Si-SiOx、SiO_x：C、SiOxNy复合薄膜，TEM及XRD的测试表明三种薄膜均为非晶结构，通过FTIR和XPS进一步分析了薄膜的结构，了解所掺杂质在薄膜中的基本状态以及结合情况。 光致发光谱测试显示三种薄膜都有470nm左右的峰位发射，说明该处发射谱与掺杂无关，进一步的分析表明该峰位发光来自于薄膜中富硅结构所产生的中性氧空位缺陷(O₃≡Si-Si≡O₃，是由与氧原子配位的二价硅的单态—单态之间的跃迁所致。 在240nm的紫外光激发下，比较三种薄膜的PL谱：Si-SiO₂薄膜有378nm处的紫外光发射，它来自于硅基薄膜中的富硅集原子团簇发光：SiOx：C薄膜有420nm处的蓝紫光发射，它来自于SiC发光或C、Si、O形成的发光中心光发射；SiOxNy薄膜有400nm处的紫光发射，其发光机理可能与Si、O、N结合形成新的发光中心有关。实验表明掺杂后硅基薄膜的发光效率及发光强度都有显著改善。更多还原

【Abstract】 To improve the luminescence efficiency and the intensity of luminescence, attempts doping with C and N elements into the silicon-based films .A series of composite thin films of Si-Si02 , SiOx:C and SiOxNy were prepared by dual ion beam co-sputtering method. The microstructures of films were characterized by means of TEM, XRD, FTIR, XPS and studied the luminescent properties of them by aid of the PL. Testing of TEM and XRD indicate that films are amorphous and father analysis from FTIR and XPS showed that the impurities(C and N ) are free states in the film at room temperature.The possible mechanism of light emission have been discussed, under ultraviolet excitation (240nm), all the sample emit the same luminescent peak at 470nm which imply that the peak is foreign to doping. The 470nm peak is usually originated from the neutral oxygen vacancy (03=Si-Si=03). After doping with C and N there are different luminescent peaks among the films of Si-Si02 , SiOx:C and SiOxNy . The peak at 378nm from Si-Si02 film is related to the silicon nano-clusters in the films and the peak at 420nm from SiOx:C and at 400nm from SiO,Ny are probably derived from the new luminescent centers(LCs) which consist of Si,0 and the impurities(C or N).更多还原