射频溅射制备ZnO:Al透明导电薄膜及性能研究

【作者】 苏伟涛；

【导师】 余志明；

【作者基本信息】 中南大学 ， 材料学， 2004， 硕士

【摘要】 本文首先对透明导电薄膜（TCO）的发展进行了总结，讨论了铝搀杂氧化锌薄膜（AZO）的性能优点，之后对AZO薄膜的晶体结构、搀杂、制备方法、用途进行了综合描述，并指出了透明导电薄膜的发展趋势。在此基础上，使用射频磁控溅射的方法在聚酯（PET）胶片表面沉积了AZO薄膜，通过改变沉积压强，射频功率等参数，使薄膜出现了不同的形貌，织构和不同的光学、电学性能，并使用原子力显微镜（AFM）、X射线衍射仪（XRD）、能谱仪（EDS）、分光光度计和方阻测量装置对薄膜的结构和性能进行了测试，得到了以下的结论： 1．Ar压强对薄膜的结构，形貌和光电性能等有重大的影响。当沉积压强从0.2Pa升高到2.0Pa时，得到以下的研究结果：1) 由于碰撞次数的增加，薄膜的厚度减小，沉积速率下降；2) AZO薄膜的颗粒尺寸明显变大，薄膜的表面粗糙度也大大的增加；3) EDS分析表明，薄膜的组成变化比较复杂，Zn／Al的原子比在1.5Pa附近有一个最大值；4) AZO薄膜的方阻迅速增加，电阻率也迅速增大，在0.2Pa下最小电阻率为3×10^-4Ωcm；5) 在各个压强下制备AZO薄膜的可见光透过率能达到90％以上，禁带宽度明显减小，蓝移现象很明显。 2．随着射频功率的增加，我们发现：1) 薄膜的厚度和生长速度均迅速上升；2) 薄膜的颗粒尺寸先减小，之后由于衬底温度的交叉影响，又开始增大，但是薄膜的表面粗糙度则呈上升趋势：3) 在125～150W之间，Zn／Al的原子比有一个最小值，这里最接近靶材的成分；4) AZO薄膜的方阻和电阻率都迅速减小；5) 功率对薄膜的透光曲线的形状影响很大，低的功率下制备的薄膜的透光范围更大，禁带宽度也越大。更多还原

【Abstract】 At first the development of transparent conductive oxide film is summarized and the advantages of aluminium doped zinc oxide (AZO) film are discussed in this paper.Then the research of AZO, such as crystal structure, doping, preparment and usage is discriped. R.F magnetron sputtering is employed to deposit AZO films on PET flake. The films show different structure, texture and optoelectric properties with the change of sputtering parameters, such as work presuure and R.F power. Many types of equipment, such as AFM, XRD, EDS, spectrometer and sheet resistance probe are used to measuere the structure and properties of zinc oxide films; finally we get several conclusions as following:1.The Ar pressure has great influence on the structure, morphology and properties of the films. When the pressure increases from 0.2Pa to 2.0Pa, some conclusions as following can be found. l)The film thickness and the decreses because the collision times increase.2)The diameter of particles and roughness of AZO film increased greately.3)EDS results show that the composition change of the film is complicate, but the atom ratio of Zn/Al reaches maximum at l.5Pa. 4)The sheet risistance and risistivity of the films increase greatly, at 0.2Pa we can get the risistivity as low as Sxl0-4Ω cm. 5)A11 the films prepared has the transparency of 90% in the visible range,the band becomes narrow and the blueshift is very clear.2. As the R.F power increase, we could find that: l)The film thickness and groth rate increase greatly.2) The particles of the film become small at first, then become bigger because of the temperature, but the roughness increase all the time.3)At the range of 125W~150W,the atom ratio of Zn/Al reaches the minium which is close to the compositon of the target.4)The sheet resistance and resitivity decrease rapidly.5)R.F power influent the shape of the transparency curve,the film made at low R.F power has wider transparency range,the wideness of the band is even bigger.更多还原