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化学浴沉积制备金属硫族化合物光电功能薄膜

Chemical Bath Depositon for Metal Chalcogenide Photoelectric Functional Thin Films

【作者】 范冬波

【导师】 汪浩;

【作者基本信息】 北京工业大学 , 材料物理与化学, 2004, 硕士

【摘要】 本文主要探索通过一种低能、环境友好的合成路线一化学浴沉积,制备金属硫族化合物光电功能薄膜,并对所获得的薄膜样品的结构、形貌、光学性质进行表征。 最近,反铁磁性材料硫化锰(MnS),由于可以作为一种潜在的太阳能电池的窗口或缓冲材料,并且可以与Cd和Zn形成稀磁半导体材料(Zn,Mn)S和(Cd,Mn)S等独特性质而成为研究的热点。室温下,我们通过化学浴沉积在普通玻璃衬底上制备出晶态的γ-MnS薄膜,并且通过改变反应条件得到了(002)取向、结晶良好的薄膜。 在实验基础上,用相关的理论探讨了实验中可能的化学反应。确定了实验参数主要通过控制金属硫化物形成可得到的自由金属离子浓度[M]和硫族离子浓度,即溶度积被超过的程度,达到对薄膜的影响。 将通过化学浴沉积在不同条件下所制备γ-MnS薄膜利用紫外分光光度计进行测量,并且通过样品的透射光谱与反射光谱计算了不同条件下样品的光学带隙宽度,所制备样品中光学带隙宽度最大为3.55eV,最小为3.07eV。 另外,通过MnS薄膜的变温光致发光光谱,探讨了MnS薄膜的光致发光机理。MnS薄膜的光致发光是一个局域现象,局域的激子自旋取向和局域杂质-微扰的相互作用,共同形成了这种独特的发光现象。 最后,通过化学浴沉积制备出黑锰矿四氧化三锰薄膜,并且研究了不同实验条件对薄膜影响。同时,我们也研究了在薄膜生长过程中,形成的共沉积粉体的性质。在实验结果的基础上,讨论了化学浴沉积制备四氧化三锰可能发生的化学反应。另外,通过对所制备的四氧化三锰样品进行紫外光谱测量,分析它的光学性质。

【Abstract】 The present thesis aimed to explore a low-energy, environmental amiably synthesis route, Chemical Bath Deposition, for depositing metal chalcogenide photoelectric functional thin films, and characterize the structure, morphology and optical properties of obtained thin films.Recently, antiferromagnetic manganese sulphide (MnS) had been the focus of intense research due to its unique properties. MnS was a potential buffer/window materials for solar cell and was especially used in mixing with Zn and Cd to form (Zn, Mn)S and (Cd, Mn)S, which belonged to diluted magnetic semiconductor (DMS). In the present thesis, the crystalline y-MnS had been synthesized via chemical bath deposition at low temperatures. Through changing deposition parameters, the (002) oriented y-MnS films consisted of crystallite with improved structure were also obtained.On the base of experimental results, the chemical reactions and equilibriums likely to occur during the deposition processes were discussed. It was ascertained that the parameters had major influence on the films by determining the available free metal ion [M] and [chalcogenide] for the metal chalcognide formation, i.e., the degree to which the solubility limit is exceeded, either directly or indirectly.To study the optical properties of y-MnS films prepared at different deposition condition, the UV-VIS spectra of them were carried out by a UV-VIS-NIR spectrophotometer and the optical band gap of them were calculated by the transmission and reflection data. Among the optical band gap of all measured samples, the biggest one is 3.55eV and the smallest one is 3.07eV.In addition, the photoluminescence mechanics of y-MnS was discussed through analyzing the photoluminescence spectra measured at different temperatures. The photoluminescence of y-MnS was a unique local luminescence phenomenon and dependent on the interaction between the local magnon alignment and the local impurity-disturb.At last, the Hausmannite manganomanganic oxide (Mn3O4) thin films were deposited by chemical bath deposition and the affect of different deposition parameters on the films was also discussed. At the same time, we also noticed the properties of the as-grown powder produced during the deposition. Following theobtained experimental results, the reactions likely to occur during the process were proposed. And then, the optical properties of Mn3O4 films were studied according to UV-VIS spectrum.

  • 【分类号】TB43
  • 【被引频次】14
  • 【下载频次】634
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