【作者】 曾建平；

【导师】 张之圣；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2004， 硕士

【摘要】 液态源雾化化学沉积（Liquid Source Misted Chemical Deposition,LSMCD）制膜法是一种新型的铁电薄膜制备工艺，它克服了甩胶工艺的缺点，继承了它们的优点，能够与半导体集成工艺兼容，是一种先进的薄膜制备技术。本论文详细描述了制备纳米颗粒PLT 薄膜的LSMCD工艺，并在已有工艺的基础上，通过对现有工艺加以改进及对实验设备的改造，经过大量的实验结果来评价工艺改进的效果，整理归纳出最佳的工艺。制备出了具有钙钛矿结构的PLT铁电薄膜，同时对薄膜的成膜机理进行了简要的探讨。在低真空条件下，同样能制备出性能良好的薄膜，这样缩短了制备周期，提高了工艺效率更有利于工生产的应用；采用脉冲抽真空的方法，维持沉积时的真空度能够稳定在略低于一个大气压，从而维持雾气流速的稳定。薄膜的形成有四个阶段：临界核的形成，岛的长大，迷津结构和连续膜。PLT薄膜的生长方式为外延生长。LSCMD技术典型的沉积参数如下：先体溶液浓度：0.5mol/L 先体溶液/溶剂的配比：1:4沉积时基片温度：室温 沉积前真空室的真空度：3×10-3torr沉积时真空室的真空度：600~700torr预热处理条件：真空条件下15℃/min升温至300℃，保温10min退火热处理条件：3℃/min升温至600℃，保温60min先体溶液保存时间：100天以上LSMCD法制备PLT薄膜沉积速率：130 ?/minPLT铁电薄膜的参数：通过XRD分析，沉积的PLT薄膜具有钙钛矿相结构，主晶相为[111]方向；制备的薄膜晶粒直径为80nm左右，属于纳米颗粒的薄膜；在100Hz的条件下制备的薄膜的介电常数为157。更多还原

【Abstract】 Liquid Source Misted Chemical Deposition (LSMCD) is an advanced film deposition technology, which dismissed the spin-on process and had such characters as good reproducibility of composition, high deposition rate, good step coverage and low temperature during the deposition. The preparation of nano-particles (Pb,La)TiO3 thin films by liquid source misted chemical deposition was studied in this paper. The nano-particles (Pb,La)TiO3 thin films with perovskite struture were obtained and the formation of the thin films was discussed briefly while the process was optimized by improving the process and modifying the equipment basing on the existed process. To evaluate the affect, lots of experiments were performed. The formation of the films included four steps: nucleon, island, maze and film. The growth mode of the films was epitaxial growth.The excellent-performance thin films were obtained in low vacuum, which abbreviated the prepare route greatly and improved the efficient of the process; The chamber pressure during position was maintained little under atmosphere pressure with the pulse evaluating to stabilize the flow of the mist.The typical deposition parameters of LSMCD are shown as below:Concentration of the precursor: 0.5mol/L. Ratio of precursor and solvent： 1：4.deposition temperature/(℃): 20-25. Working frequency of the humidifier/(MHz): 1.7.Chamber pressure prior to deposition/(Torr): 3(10-5.Chamber pressure during deposition /(Torr): 600~700.Baking condition: increased to 300℃with 15℃/min for 10min.Annealing condition: increased to 600℃with 3℃/min for 60min.The deposition rate of PLT by LSMCD ：130 ?/min;Parameters of prepared PLT thin films:Perovskite structure with [111] direction under XRD; The average diameter of the particles were about 80nm; The PLT films dielectric constant was 157 under 100Hz.更多还原