【作者】 霍秀敏；

【导师】 任丙彦； 赵玉文；

【作者基本信息】 河北工业大学 ， 材料物理与化学， 2004， 硕士

【摘要】 本文主要研究了太阳电池用直拉硅片中氧碳含量对太阳电池光电转换效率的影响。主要工作包括三个部分：首先研究了不同温度的热退火对于硅片氧碳含量和少子寿命的影响，然后将热处理过程应用于常规太阳电池的制备工艺，制出太阳电池。比较两种工艺过程太阳电池的性能。 作为该项研究的先期工作，首先以p型(100)太阳电池用直拉硅片为实验样品，摸索出热退火的最佳处理温度；然后用常规工艺制备了单晶硅太阳电池，测试效率；结果发现用经过热处理的硅片衬底制备的太阳电池比用没有经过热处理的硅片衬底制备的太阳电池其效率有明显改善。将太阳电池样品分别用PECVD(Plasma Enhanced Chemical Vapor Deposition)做减反射膜，用FG(Forming Gas)烧结，测试电池性能，发现用PECVD处理后电池效率有所提高，用FG烧结后同样有所改善。 其次，研究了太阳电池用硅片中碳的热行为以及热处理过程中碳对硅片中氧沉淀和少子寿命的影响。其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。 作为本文的主要内容，对影响太阳电池光衰减的主要因素—硼、氧进行了研究。文中首先介绍了掺硼单晶硅太阳电池的光照衰减问题及衰减机制，然后以p型掺硼单晶硅为实验样品，经过不同温度的热处理，对影响光衰减的主要因素硼、氧进行了研究。上述研究工作表明：为了避免光衰减，提高硅片少子寿命，应该选择低氧浓度的硅片，并降低硼的掺杂浓度，即：使用高阻材料制作太阳电池。 上述工作对研究太阳电池用直拉硅片中氧碳含量对太阳电池光电转换效率提供了良好的依据，为进一步改善太阳电池的性能奠定了基础。更多还原

【Abstract】 The wide use of solar cells will be a feasible way to solve the energy and environmental protection problems. The development of solar cells is showing a tendency to improve efficiency and reduce cost. Crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none-pollution.To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. Three parts are studied in our work, Firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of CZ-Si are studied , then put it into the process of solar cell and compare the capability of solar cell in two process. The proper temperature is felt about from the substrate of P(100) CZ-Si ,and it is found that the solar cell conversion efficiency has been improved from 8.85% to 11.45% for the annealing process. Suitable processing conditions for cells’ fabrication, hydrogen passivation, SiNx anti-reflection coating deposited by plasma enhanced chemical deposition (PECVD) are also studied .Secondly, the character of carbon and the effect of carbon on the oxygen deposition in annealing are studied . The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing .Finally, the effect of boron and interstitial oxygen on the light degradation are studied. In this part, the issues and mechanism of light degradation of B-doped p-type CZ-Si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of B-doped CZ-Si solar cells. Then in the experiment the B-doped CZ-Si is chosen as the substrates and annealled at different temperature. The change of interstitial oxygen content and the change of minor carrier lifetime are studied. In order to avoid light degradation, low interstitial oxygen content and low boron concentration B-doped p-type CZ-Si material should be used , for example, the resistivity can be from 5-10 Ω.cm, the efficiency has reached to 22.0%. The necessary is to make BSF for good back contact.更多还原