Yb：YPxV₁-xO₄激光晶体生长、结构与性能的研究

【作者】 赵斌；

【导师】 陈建中；

【作者基本信息】 福州大学 ， 物理化学， 2004， 硕士

【摘要】 本论文报告了YPxV1-xO4和YbYP_xV_1-xO₄晶体的生长、光谱性质等。采用液相法合成多晶粉末原料，并以提拉法（Czochralski）生长单晶，讨论了与晶体生长有关的一些影响因素。电感耦合等离子体发射光谱分析了晶体中掺杂离子的浓度，由此分析得到Yb3+在YbYP_xV_1-xO₄晶体中的分凝系数约为0.83。晶体的X-射线粉末衍射线的位置与YVO4标准粉末衍射谱图相符合，并由衍射峰计算得到晶体的单胞参数，发现晶胞体积随掺杂量增加而减小。利用Nd:YAG激光器测试晶体的激光损伤阈值，随着掺杂离子浓度的增大，激光损伤光功率密度呈减小趋势。在室温下测试YPxV1-xO4和YbYP_xV_1-xO₄晶体的吸收光谱与荧光光谱，由此可初步判定Yb3+的Stark能级。用F—L公式计算了晶体Yb3+的2F7/2－2F5/2能级跃迁的发射截面、辐射跃迁几率、辐射寿命等光谱参数。晶体荧光峰的半峰宽约为50nm，具有较宽的发射谱带，适合用作可调谐激光器的工作介质，也适用作飞秒锁模激光输出。考察了P含量对晶体性能的影响，得出初步结论：当少量掺杂P时对提高YbYVO4晶体性能有利。更多还原

【Abstract】 This thesis reports the growth, spectral properties of YPxV1-xO4 and YbYP_xV_1-xO₄ crystals.The polycrystalline material was synthesized by the liquid-phase reaction method and the single crystals were grown by the Czochralski method. The segregation coefficients of the dopant ions in YbYP_xV_1-xO₄ crystal were calculated in terms of the component analyses by ICP. The positions of the X-ray power diffraction peaks are quite consistent with the JCPDS date of YVO4, from which the lattice structure parameters of the crystals were calculated. The laser damage threshold of the YbYP_xV_1-xO₄determined by Nd:YAG laser, which showed a decreasing tendency with the increase of the dopant concentration. The absorption spectra and the fluorescence spectra of YbYP_xV_1-xO₄ crystal were measured at room temperature, from which the Stark levels of the Yb3+ ion were concluded. The spectra parameters of these crystals can be calculated by the F-L formula, which show that the crystals are applicable for the tunable laser and femtosecond laser because of their large emission broadband （FWHM～50nm）. A conclucion can be drawed by study the effection of P ,that is ,lower P dopant is good to improve the properties of YbYP_xV_1-xO₄ crystal.更多还原