【作者】 金德虎；

【导师】 伍登学；

【作者基本信息】 四川大学 ， 凝聚态物理， 2001， 硕士

【摘要】 掺金和掺铂技术被广泛地应用于制造快恢复二极管中，这两种技术各具优缺点。本实验提出金铂双掺杂技术，与掺金和掺铂技术相比较，综合考虑快恢复二极管各个参数特性，选择制造快恢复二极管的最佳工艺。 本硕士论文工作中，制备了掺金、掺铂和金铂双掺杂快恢复二极管。测试了三种样品的V_F～T_RR兼容性，T_RR～I_R在室温和125℃时的关系曲线，T_RR、I_R、V_F的温度特性及V_F～I_F特性。 有文献从理论上对掺金和掺铂二极管进行了分析，认为：掺金二极管V_F～T_RR兼容性优于掺铂二极管，但高温反向漏电流远大于掺铂二极管。为兼顾单独掺金和掺铂快恢复二极管的优缺点，本实验采用了金铂双掺杂技术制造了快恢复二极管，并通过与掺金和掺铂技术的比较，初步得到了金铂双掺杂技术的工艺参数和特性参数。 实验结果表明：金铂双掺杂二极管的V_F～T_RR特性介于掺金和掺铂二极管之间，反向漏电流在高温段介于后两者之间。实验测量的V_F～I_R特性、T_RR～I_R特性、V_F～T特性均得到金铂双掺杂二极管介于掺金和掺铂二极管之间的结果。金铂双掺杂技术兼顾了单独掺金和单独掺铂技术的优缺点，说明金铂双掺杂技术在制造快恢复二极管方面具有重要的应用前景。 本实验对三种样品的温度特性进行了深入研究。研究发现，掺金二极管正向压降最低，掺铂二极管最高，金铂双掺杂二极管介于中间；在-75℃至-25℃之间，三种样品的反向漏电流变化都很缓慢，而且大小相当，这说明表面漏电流在低温段已经起了主要作用；金铂双掺杂二极管的T_RR～T特性在低温接近掺铂二极管，在高温段接近掺金二极管，说明金和铂在不同的温度下所起的作用不同，这不仅具有工艺价值，而且具有理论价值。 通过DLTS实验证明:三种样品均未被其它杂质污染，而且也没有发生交叉污染;金铂双掺杂二极管中，金和铂杂质没有相互作用形成新能级。更多还原

【Abstract】 Aurum(Au) and Platinum(Pt) doping techniques are widely used to fabricate the fast recovery diodes(FRD), and both of them have merit and demerit. Au and Pt Dual doping technique is reported in this paper, which is compared with Au doping and Pt doping technique. The optimal technology will be chosen by comprehensive consideration of properties of all parameters of FRD.This paper has reported the fabrication of Au doping, Pt doping and Au and Pt dual doping FRD. We have measured the parameters of the three samples, including trade off of VF-TRR. relation of TRR and R at the temperature of 25℃ and 125℃, temperature properties of TRR, IR, VF ,and the property of VF~IR .The theory analysis has been reported that VF-TRR trade off of Au doping diodes is superior to Pt doping diodes, while its’ high temperature reverse leakage current is much larger than Pt doping diodes. To considerate the merit and demerit of solo doping technique, we fabricated the Au and Pt dual doping FRD in our experiment, and got the technology and property parameters of Au and Pt dual doping technique through comparing to Au doping and Pt doping technique.The result of the experiment shows that property of VF-TRR of Au and Pt dual doping diodes is between Au doping diodes and Pt doping diodes, so do the properties of VF-IR, TRR-IR,VF-T and IR at high temperature. The technique of Au and Pt dual doping gives consideration to both Au doping technique and Pt doping technique, which shows the applied perspective in fabrication FRD.We have studied intensively on the temperature properties of the threeAu and Pt dual doping gives consideration to both Au doping technique and Pt doping technique, which shows the applied perspective in fabrication FRD.We have studied intensively on the temperature properties of the three samples and found that forward voltage drop(Vp) of Au doping diodes is the lowest, VF of Pt doping diodes is the highest while VF of Au and Pt dual doping diodes is between the formers. The reverse leakage current(lR) of the three samples changes very slowly with the temperature between - 75 ℃ and - 25 ℃,and the value of IR of the three samples are approximate, this shows that the leakage current of surface acts importantly under this temperature. The property of TRR-T of Au and Pt dual doping diodes is similar with Au doping diodes at high temperature and Pt doping diodes at low temperature, which is of technology value and theory value.The experiment of DLTS manifests that the three samples haven’t been contaminated by other impurities and haven’t contaminated each other,either. Au and Pt do not interact with each other in dual doping diodes and no new energy lever has been found更多还原