【作者】 李薇薇；

【导师】 刘玉岭；

【作者基本信息】 河北工业大学 ， 微电子学与固体电子学， 2003， 硕士

【摘要】 随着科学技术的飞速发展，ULSI集成度迅速提高，器件的特征尺寸不断减小，对于衬底片表面状态的要求更加严格。衬底的表面状态及污染物的去除程度是影响晶片优良率和器件质量与可靠性的最重要的因素之一。在ULSI的制备过程中，氧化、外延、扩散、光刻以及多层布线的全局平面化等工序都要涉及到去除污染物的清洗，清洗最多可以达到80多次。目前清洗不但要去除硅片表面的有机物而且需要去除的颗粒尺寸已经达到了纳米级，金属离子达到了ppt级。因此发明适应超大规模集成电路要求的新型的清洗液和新型的清洗技术是当务之急。对于硅衬底片的清洗，国际上比较通用的清洗方法是采用Ⅰ，Ⅱ，Ⅲ号液进行清洗，因为Ⅰ，Ⅱ，Ⅲ号液用于清洗有效率高，效果好，产物无沉淀等的优势，但是随着ULSI对清洗要求的提高它也存在一些难以解决的问题，目前解决Ⅰ，Ⅱ，Ⅲ号液存在的问题，保证硅片的表面平整度，提高清洗的效率是研究的重点。本论文通过实验找到了改进和替代Ⅰ，Ⅱ，Ⅲ号液的清洗方法，能够达到较为理想的清洗效果。半导体硅单晶衬底加工工业中最受重视是硅磨片的清洗，由于硅磨片是用金刚砂研磨的，研磨过程中又要去除相应的厚度，所以刚加工的磨片表面附着着大量的金刚砂和研磨下来的硅粉，而且还有相当一部分金刚砂和硅粉镶嵌到破损层里面，这给后续的清洗工作带来了困难。通过实验可以发现，利用有机碱在超声条件下配合渗透剂、表面活性剂等对硅磨片进行清洗可以达到较好的效果。本文还对液晶显示屏的清洗做了进一步的研究。液晶显示屏加工工艺中，清洗去除残余的液晶，防止它腐蚀电极，造成器件报废是至关重要的。以前利用氟利昂清洗液晶显示屏，虽然清洗效果较好但是不利于环保，是国家急需替代的ODS。目前应用的水基清洗技术存在的问题是清洗时间较长，效率低。通过进一步的实验，成功的研究了一种水基清洗的改进方法，可以把清洗时间降低到3～5分钟，有效提高了清洗的效率。更多还原

【Abstract】 With the rapid development of science and technology, the integrated degree improves fast and character size of devices minishes ceaselessly. The demand of impurities on substrate is more and more strict. The surface state of substrate and cleanliness are the most important factors that would affect the quality and reliability of devices. There are many procedures involve cleaning step such as oxidization, extension, diffusion, photofabrication and global complanation in the fabrication sequence of ULSI. The most time of cleaning is 80 times. Recently, cleaning should remove not only organic matter on silicon surface, but also the particles of millimicron order and ppt metallic ions. So new types of cleaning solution and cleaning technology adapted to ULSI should be invented.The general cleaning method that be used all over the world is using I, II, III solutions. Because I, II, III solutions have high cleaning efficiency, favorable cleaning effectiveness and soluble products. But it has many problems that can’t be solved by itself. So insuring the flatness of silicon wafer and improving the cleaning efficiency are emphasis of research. The improved cleaning method has been searched out by means of experiment. This cleaning method can attain ideal cleaning performance.Now people attach importance to the cleaning of silicon grinded wafer. There are a lot of carborundums and silicon powders on the wafer surface because grinded wafer are grinded by carborundum and corresponding depth are remove in the sequence of grinding. After grinding there are plenty of carborundums and silicon powders enchase in the damaged layers. So there are many difficulties in later processes. According to experimentation we find that using organic base, permeate agent and surface active agent under the condition of ultrasonic would attain achieve better cleaning effective.Further study has been introduced in this article. It is very important that removing the residual liquid crystal in fabrication of liquid crystal display screen. Otherwise, the residual liquid crystal would corrode the electrodes and destruct the whole devices. The cleaning performance is good by use of freon but the environment would be destroyed. Freon is the material that should be substitute immediately by the state. The troubles of aquifer cleaning are long cleaning time and low efficiency. A new improved method of aquifer cleaning can reduce the cleaning time to 3-5min. The cleaning efficiency has been improved greatly.更多还原