【作者】 连军；

【导师】 刘玉岭；

【作者基本信息】 河北工业大学 ， 微电子学与固体电子学， 2002， 硕士

【摘要】 随着集成电路技术的飞速发展，集成度越来越高，特征尺寸越来越小，导致了结构的立体化，布线多层化。这就对内部层与层之间的表面要求更高，尤其是层表面的平整度，而传统的抛光工艺已不能满足这一要求，而化学机械抛光技术不仅能满足这种要求，而且能够减少缺陷，还可以通过提高表面平整度来提高套刻精度，从而达到减小特征尺寸提高集成度的目的。 化学机械抛光工艺中应用最广的是层间介质抛光，二氧化硅是最常用的层间介质，因此对它的研究也就成为目前工作的重点。本课题选定二氧化硅介质的化学机械抛光技术为研究方向，针对氧化铈磨料的高速率的特性，采用氧化铈为磨料，通过大量实验，对二氧化硅介质的抛光液的配置进行了深入的研究，通过制备氧化铈胶体抛光液，解决了粉碎性氧化铈磨料容易引起划伤的缺点，并对工艺参数进行了优化调整；对其机理进行了深入探讨；本课题所作的工作必将促进化学机械抛光工艺早日实现规模化应用，推动集成电路工业的发展。更多还原

【Abstract】 As the 1C technology develops at very fast speed, the degree of integration is higher and higher and the feature size is smaller and smaller. The structures become solid, and multilayer. Thus, the request of surface quality between the layers is stricter, especially the flat of the surface. The traditional skills are not able to satisfy this request, but the CMP technology can not only satisfy this request but also reduce the defects. It can advance the sheath fluting precision by way of the elevation of the surface flat. Then, it achieves the aims that reducing the feature size and increasing the integration degree.The most applied CMP technology is the ILD CMP. And the most applied ILD is SiO2. So, the study of the SiO2 CMP is one of the emphases. Our task chooses the SiC>2 CMP as the study direction. We use the CeOj as the abrade aim at the high polishing rate of it. We have investigated the slurry’s making deeply by great deal of experiments. We have solve the problem of nick that caused by shattered CeO2 abrasive. We have adjusted the technics parameter and discussed the mechanism of CMP deeply. The work of this task must accelerate the sizable application of CMP and promote the development of the 1C industry.更多还原