【作者】 陆秀洪；

【导师】 亢宝位；

【作者基本信息】 北京工业大学 ， 微电子学与固体电子学， 2001， 硕士

【摘要】 本文提出了一种新结构的IGBT，命名为低功耗IGBT（LPL-IGBT）。它的设计基于这样一种思路：保留NPT-IGBT在n~-单晶衬底上制造、离子注入形成超薄且轻掺杂的背p~+发射区的特点，从而保留了NPT-IGBT的性能优点；同时在耐压层中引入n~+缓冲层，大大减薄n~-耐压层厚度以降低功率损耗。它的制作方法如下：对n~-单晶硅片进行双面深结扩散，然后去除其中一面扩散层并在n~-上制作MOSFET结构，再减薄另一面的扩散层，得到一定厚度的预扩散层的残留层，然后硼注入制作背p~+发射区并制作背面电极。与FSIGBT相比，LPL-IGBT的n~+缓冲层厚度达几十微米，不存在耐压和漏电流不易保证的缺点，因而更适合实际生产。计算机仿真显示，LPL-IGBT的关断损耗比PT-IGBT和NPT-IGBT减小一倍左右，实验的初步结果一定程度上证实了LPL-IGBT在功耗性能上的优越性。更多还原

【Abstract】 A IGBT with a new smicture Which is named Low Power Loss IGBT(LPL-IGBT), is proposed in this paper, based on a simple concept that the power lossof IGBT will be reduced if the device has a n+ buffer and thus a much thinner n-region, while remained being processed on bulk silicon and produced a very thin andlow doped back p+ emitter by ion imp1antation, as NPT-IGBT is processed. In theprocess of LPL-IGBT a double diffesion on n- bulk silicon material is first executed,which makes thick n+ diffesion regions in both sides of it. Then MOSFET cells aremanufactUred on n- region, which is uncovered by removing the n+ diffesion region onit. After this, the back p+ emitter is produced by implaming B ions on the other n+diffosion region, Which is reduced to a cermin thicAness in advance remained aresidual layer of the pre-diffosed n+ region. At last the back electrode is made. Havinga much thicker n+ buffer, LPL-IGBT overcomes the shortcoming of FSIGBT whoseperformances of breakdown and leakage current are so unstable that keep backFSIGBT adopted in industries. The computing simulations show that the power lossof LPL-IGBT is almost a half of that of the PT-IGBT or NPT-IGBT The primaryresult of experimental proved the advantage of LPL-IGBT to a certain degree.更多还原