CMOS/SOI模拟电路的研究

【作者】 罗萌；

【导师】 张志勇； 权海洋；

【作者基本信息】 西北大学 ， 电路与系统， 2001， 硕士

【摘要】 SOI技术是一种非常有潜力的新型硅技术，被称为21世纪的硅技术。本文对SOI技术，特别是CMOS/SOI技术，做了较详细的阐述。并利用CMOS/SOI技术的优点，研制高性能抗辐射CMOS/SOI逐次逼近式A/D转换器，设计出了A/D转换器中重要的单元电路——比较器。利用模拟软件SPICE3和SOI MOSFET器件模型BSIM3SOI对SOI器件和电路进行了模拟和分析。经过试投片，做出了具有基本设计功能的CMOS/SOI A/D转换器。通过测试可以看出CMOS/SOI A/D转换器的抗核加固性能明显优于体硅电路。CMOS/SOI A/D转换器的研制可打破国外对我国高性能抗辐射A/D，D/A的禁运，提高我国空间卫星抗辐射性能，具有较大社会效益和较好的经济效益。根据目前掌握的情况在国内处于领先地位。更多还原

【Abstract】 SOT technology is very promising silicon technology, called silicon technology of the 2Ith Century. In this thesis, the theory of SOT technology, especially CMOS/SOT technology, is introduced in detail. Using CMOS/SOT technology, high-performance and radiation hardness A/D converter is fabricated. One of the most important cells of AJD converter, which is comparator, is designed. The SOT MOSFET扴 and circuits have been simulated with SPICE simulator and the BSIM3SOI SPICE model. This set of CMOS/SOT design techniques is incorporated in a experimental chip fabricated in a 5 1?m CMOS process. The A/D converter with design functions is obtained. Through the experiments, we have found that the SOT /CMOS AID converter have good radiation hardness. Fabrication of high performance and radiation hardness A/D converter can improve radiation hardness of satellites of our country and break embargo of A/D converter with radiation hardness of other countries, which yield good economic effects and social effects. According to our investigation, our work is leading at home.更多还原