超大规模集成电路二氧化硅介质化学机械抛光研究

【作者】 刘立威；

【导师】 刘玉岭；

【作者基本信息】 河北工业大学 ， 微电子学与固体电子学， 2000， 硕士

【摘要】 随着集成电路工业的发展，芯片集成度不断提高，特征尺寸不断减小，为了改善芯片电学性质，需要采用多层金属布线结构，导致芯片表面要求达到全局平面化，而传统的抛光工艺已不能满足这一要求，现在CMP工艺已被人们认为是唯一可实现全局平面化的工艺。但是由于其工艺的复杂性，人们对CMP机理以及工艺参数的作用仍缺乏深入的认识，大量的结论仍是实验性结果，另外，CMP本身也存在诸如表面划伤、金属离子沾污、吸附颗粒难以清洗等问题，从而限制了它的规模化应用。本课题选定二氧化硅介质CMP为研究方向，通过大量实验，重点进行了SiO₂介质抛光液的配置，包括：有机碱、活性剂的选择及其作用机理；其次，对CMP工艺参数进行了优化调整，总结出了最佳的温度、压力、流量等工艺条件，并对其机理进行了深入探讨，建立了一条以化学作用为主，小粒径、高速率、高完美、高平整的CMP工艺路线，有效解决了目前氧化物化学机械抛光中存在的表面划伤、颗粒吸附难以清洗、金属离子沾污等问题。本课题所做的工作必将促进CMP工艺早日实现规模化应用，推动IC工业的发展。更多还原

【Abstract】 CMP is the result of the semiconductor industry抯 needs to fabricate multilevel interconnections for increasingly complex, dense and miniaturized devices and circuits. Now, CMP has been regarded as the unique technology to meet the need of global planarization. Because of the complex of CMP, the mechanism has not been known deeply. The most mechanism is the results of experiences. Moreover, CMP has many challenges, such as: surface scratch, metal ions contamination and particle adsorption, etc. In this paper, the subject of silica dielectric CMP has been studied. The slurry and the polishing conditions -have been studied through a large of experiences, the mechanisms of oxide CMP has been discussed systematically , and some conclusions including choice of components of the slurry and the optimal conditions have been reached, and the mechanism of Si02 CMP has been researched deeply. As a result , a new route which has the characteristics of high-rate, high- uniformity and small abrasive size has been established, and the problem of surface scratch, metallic ions contamination and particle adsorption have been resolved effectively. Researches of this subject will improve the technology and advance the development of IC industry.更多还原