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Defect-free InAs nanowires self-catalyzed growth on graphene/Ge by molecular beam epitaxy

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【作者】 张燕辉姜海涛范柳燕霍子帆张孜腾周灿王亚杰郑长林舒海波周孝好陈平平邹进陆卫

【Author】 Yanhui Zhang;Haitao Jiang;Liuyan Fan;Zifan Huo;Ziteng Zhang;Can Zhou;Yajie Wang;Changlin Zheng;Haibo Shu;Xiaohao Zhou;Pingping Chen;Jin Zou;Wei Lu;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences;University of Chinese Academy of Sciences;State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences;State Key Laboratory of Surface Physics and Department of Physics, Fudan University;College of Optical and Electronic Technology, China Jiliang University;Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland;Institute of Energy Materials Science, University of Shanghai for Science and Technology;School of Physical Science and Technology, Shanghai Tech University;

【通讯作者】 张燕辉;舒海波;陈平平;

【机构】 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesUniversity of Chinese Academy of SciencesState Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of SciencesState Key Laboratory of Surface Physics and Department of Physics, Fudan UniversityCollege of Optical and Electronic Technology China Jiliang UniversityMaterials Engineering and Centre for Microscopy and Microanalysis, The University of QueenslandInstitute of Energy Materials Science, University of Shanghai for Science and TechnologySchool of Physical Science and Technology, Shanghai Tech University

【摘要】 In As nanowires(NWs) self-catalyzed grown on graphene surface frequently exhibit a large number of stacking-fault defects.However,the control of these defects in InAs NWs still remains a large challenge,which significantly limits the applications of In As NWs in electronics and optoelectronics.In this work,the self-catalyzed growth of In As NWs on graphene/Ge substrate by molecular beam epitaxy(MBE) is systematically investigated.Growth models for In As NWs and parasitic islands on graphene/Ge are developed.Through rational design of growth parameters,the self-catalyzed growth of defect-free InAs NWs on graphene surfaces is ultimately achieved.Our experimental results indicate that lower growth temperature can effectively suppress the formation of stacking-fault defects in InAs NWs,no visible stacking-fault defects are observed in the samples grown below 510℃,and the intrinsic mechanism for this is clarified with the density functional theory(DFT) calculations.

【Abstract】 In As nanowires(NWs) self-catalyzed grown on graphene surface frequently exhibit a large number of stacking-fault defects.However,the control of these defects in InAs NWs still remains a large challenge,which significantly limits the applications of In As NWs in electronics and optoelectronics.In this work,the self-catalyzed growth of In As NWs on graphene/Ge substrate by molecular beam epitaxy(MBE) is systematically investigated.Growth models for In As NWs and parasitic islands on graphene/Ge are developed.Through rational design of growth parameters,the self-catalyzed growth of defect-free InAs NWs on graphene surfaces is ultimately achieved.Our experimental results indicate that lower growth temperature can effectively suppress the formation of stacking-fault defects in InAs NWs,no visible stacking-fault defects are observed in the samples grown below 510℃,and the intrinsic mechanism for this is clarified with the density functional theory(DFT) calculations.

【基金】 Project supported by the Robotic AI-Scientist Platform of Chinese Academy of Sciences,the National Natural Science Foundation of China (Grant Nos.12027805,62171136,and 12227901);Programs of Shanghai Science and Technology Commission (Grant No.22501100202)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2026年03期
  • 【分类号】TB383.1;O643.3
  • 【下载频次】7
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