Characterization of large ferroelectric polarization and high-T_C in sol–gel deposited PbTiO₃-based perovskite thin films

【摘要】 BiMeO₃–PbTiO₃（where Me represents transition metals） perovskite-type thin films have been widely studied due to their superior ferroelectric properties, including robust ferroelectric polarization and high Curie temperatures. In this study, PbTiO₃-based perovskite thin films of xBi(Cu_1/2Zr_1/2)O₃–（1-x）PbTiO₃（xBCZ–（1-x）PT） were designed and prepared on Pt（111）/Ti/SiO₂/Si substrates using the conventional sol–gel method. The x BCZ–（1-x）PT thin films demonstrate remarkable crystallinity, characterized by a perovskite structure and a dense microstructure, which contribute to their highperformance ferroelectric and fatigue properties. Notably, the thin films exhibit large remnant polarization（2P_r） values,reaching 98 ??C·cm^-2 and 74 ??C·cm^-2 for the 0.05BCZ–0.95PT and 0.1BCZ–0.9PT compositions, respectively. Furthermore, the thin films also demonstrate a high Curie temperature（T_C= 510℃）, as well as favorable fatigue properties and low leakage current, suggesting their potential applicability in ferroelectric devices.更多还原

【Abstract】 BiMeO₃–PbTiO₃（where Me represents transition metals） perovskite-type thin films have been widely studied due to their superior ferroelectric properties, including robust ferroelectric polarization and high Curie temperatures. In this study, PbTiO₃-based perovskite thin films of xBi(Cu_1/2Zr_1/2)O₃–（1-x）PbTiO₃（xBCZ–（1-x）PT） were designed and prepared on Pt（111）/Ti/SiO₂/Si substrates using the conventional sol–gel method. The x BCZ–（1-x）PT thin films demonstrate remarkable crystallinity, characterized by a perovskite structure and a dense microstructure, which contribute to their highperformance ferroelectric and fatigue properties. Notably, the thin films exhibit large remnant polarization（2P_r） values,reaching 98 ??C·cm^-2 and 74 ??C·cm^-2 for the 0.05BCZ–0.95PT and 0.1BCZ–0.9PT compositions, respectively. Furthermore, the thin films also demonstrate a high Curie temperature（T_C= 510℃）, as well as favorable fatigue properties and low leakage current, suggesting their potential applicability in ferroelectric devices.更多还原