【摘要】 基于AlGaN的深紫外激光二极管因电子泄漏和空穴注入效率低下而面临性能挑战，且传统电子阻挡层的极化效应会加剧这些问题。为克服这些限制，本文提出了一种无电子阻挡层的深紫外激光二极管设计方案，在最后一个量子阱之后引入了一层1 nm厚的未掺杂Al_0.8Ga_0.2N薄条状层。通过PICS3D仿真，本文评估了其光学和电学特性。结果表明，有效电子势垒高度显著增加（从158.2 meV增至420.7 meV），而空穴势垒高度则从149.2 meV降至62.8 meV，这增强了空穴注入并减少了电子泄漏。优化后的结构（LD3）输出功率提升了14%，斜率效率提高至1.85 W/A，而且降低了阈值电流。该设计还减弱了量子局域斯塔克效应，并形成了双空穴积累区，从而提高了复合效率。本文的研究成果为适用于高功率应用的高性能、无EBL深紫外激光器提供了一种极具前景的解决方案。更多还原

【Abstract】 AlGaN-based deep-ultraviolet（DUV） laser diodes（LDs） face performance challenges due to electron leakage and poor hole injection which is often worsened by polarization effects from conventional electron blocking layers（EBLs）. To overcome these limitations, we propose an EBL-free DUV LD design incorporating a 1-nm undoped Al_0.8Ga_0.2N thin strip layer after the last quantum barrier. Using PICS3D simulations, we evaluate the optical and electrical characteristics. Results show a significant increase in effective electron barrier height（from 158.2 me V to 420.7 meV） and a reduction in hole barrier height（from 149.2meV to 62.8 meV）, which enhance hole injection and reduce electron leakage. The optimized structure（LD3）achieves a 14% increase in output power, improved slope efficiency（1.85 W/A）, and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions, improving recombination efficiency.更多还原