【摘要】 金刚石/Cu基复合材料因具有高导热低膨胀的优异特点，已成为热管理材料领域的研究热点。本文采用低温短时真空热压法制备出B掺杂金刚石/Cu-xB基复合材料（质量分数x=0.2%、0.4%、0.6%、0.8%）,研究了B掺杂对复合材料界面结合状况及热学性能的影响。EDS能谱和X射线衍射（XRD）分析证实，在金刚石/Cu界面处形成了碳化硼（B₄C）,且碳化硼的生成量随B含量的增加而增加。适量B元素掺杂可改善金刚石/Cu界面结合状况，是提升复合材料热导率的有效途径。测定结果显示，当B掺入质量分数为0.2%时，复合材料的热导率从284 W/（m·K）提高至713 W/（m·K）,热膨胀系数为6.4×10^-6K^-1,可满足半导体器件的应用要求。更多还原

【Abstract】 Diamond/Cu-based composites have become a research hot-spot in the field of thermal management materials due to their excellent characteristics of high thermal conductivity and low thermal expansion. In this paper, B-doped diamond/Cu-xB composites（ mass fraction x=0.2%、0.4%、 0.6%、0.8%） were fabricated by a low-temperature short-time vacuum hot pressing method, and the effects of B doping on the interfacial bonding conditions and thermal properties of the composites were investigated. EDS and XRD analyses confirmed that boron carbide（B₄C） was formed at the diamond/Cu interface, and the amount of B₄C increased with the increase of B content. Appropriate B doping can improve the interfacial bonding conditions of diamond/Cu and is an effective way to enhance the thermal conductivity of the composites. The measurement results show that when the B doping amount is 0.2%, the thermal conductivity of the composites increases from 284W/（m·K） to 713W/（m·K）, and the coefficient of thermal expansion is 6.4×10^-6K^-1, which can meet the application requirements of semiconductor devices.更多还原