【摘要】 量子点发光二极管(QLED)因其色彩纯度高、发光效率高、稳定性好、可溶液加工、全彩可调以及与现有工艺兼容性好,被认为是下一代高分辨率、低功耗显示器件的有力候选。实现量子点图案化是其显示应用的前提,多种光刻技术应运而生。目前QLED图案化技术正在从传统光刻、喷墨打印等工艺复杂、性能损伤大的制备方法向直接光刻等高分辨率、无损伤方法演进。本文综述了量子点直接光刻技术的基本原理,重点讨论了3种光敏基团(叠氮类、偶氮类、二硫键类)的交联机制、光刻性能及其对QLED性能的影响,对未来量子点直接光刻技术的发展趋势及其在QLED显示的发展方向进行了预测,对未来图案化QLED显示技术的发展方向具有一定参考意义。更多还原

【Abstract】 Quantum dot light-emitting diodes(QLEDs),owing to their high color purity,excellent emission efficiency,solution processability,full-color tunability,and compatibility with existing fabrication techniques,are regarded as strong candidates for next-generation high-resolution and lowpower display devices.The realization of quantum dot patterning is a prerequisite for their display applications,giving rise to the emergence of various photolithographic techniques.At present,QLED patterning technologies are evolving from methods such as traditional photolithography and inkjet printing,which involve complex processes and often induce performance degradation,toward direct photolithography approaches that enable high resolution and nondestructive patterning.This article reviews the fundamental principles of direct photolithography of quantum dots,with a particular focus on the crosslinking mechanisms,lithographic performance,and impacts on QLED device characteristics of three representative photosensitive groups(azide,azo,and disulfide).Furthermore,the future development trends of direct photolithography for quantum dots and its potential directions in QLED displays are discussed,providing valuable insights for the advancement of patterned QLED display technologies.更多还原