【摘要】 本文系统地总结了集成电路制作过程中浅沟隔离槽(Shallow trench isolation,STI)、层间介质(Inter level dielectric,ILD)以及金属层等的化学机械抛光研究进展。在浅沟隔离槽的化学机械抛光过程中，材料去除机理与稀土抛光材料中的三价铈的含量密切相关，材料表面三价铈的含量越高，抛光速率越快。在层间介质的化学机械抛光过程中，Cook提出弹性接触理论较好地解释了材料去除机理。在金属膜层的化学机械抛光过程中，材料去除机理涉及金属表面被氧化生成其氧化物后通过机械抛光作用而达到材料去除的目的。更多还原

【Abstract】 This article systematically summarizes the research progress on chemical mechanical polishing of shallow trench isolation（ STI）,inter level dielectric（ ILD） and metal layers in the process of integrated circuit fabrication. In the shallow trench isolation（ STI） CMP processes,the materials removal rate is relative to the Ce³⁺concentrations on the surface of cerium oxide,the higher Ce³⁺concentration leads to the higher polishing efficiencies. In the chemical mechanical polishing of dielectric materials,Cook’s elastic contact theory offers a well-substantiated explanation for the material removal mechanism. During the chemical mechanical polishing process of metal thin films,the material removal mechanism involves the oxidation of the metal surface to form the corresponding oxide,followed by mechanical abrasion to remove the material.更多还原