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Compact InAs Quantum Dot Multilayers Realizing High-Power Lasers

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【作者】 陈治江杨礴尹泽昌陈佳韦文奇王子昊王霆张建军

【Author】 Zhi-jiang Chen;Bo Yang;Ze-chang Yin;Jia Chen;Wen-qi Wei;Zi-hao Wang;Ting Wang;Jian-jun Zhang;Institute of Physics, Chinese Academy of Sciences;School of Physical Sciences, University of Chinese Academy of Sciences;Songshan Lake Materials Laboratory;

【通讯作者】 王霆;张建军;

【机构】 Institute of Physics, Chinese Academy of SciencesSchool of Physical Sciences, University of Chinese Academy of SciencesSongshan Lake Materials Laboratory

【摘要】 <正>Utilizing quantum dots (QDs) as a gain medium to achieve ultra-high optical output at telecommunication wavelengths remains a persistent goal. In this work, we present an approach to enhance optical gain while maintaining a compact active region, suitable for high-power QD lasers operating at a wavelength of 1.31??m. By reducing the growth temperature of In As QDs in the latter layers, compact 12-layer QDs with high density and photoluminescence intensity are achieved.

【关键词】 lattermaintainingpersistent
【基金】 supported by the National Natural Science Foundation of China (Grant Nos. 62225407,62534010, 62334013, 12494604, 12274449, and 62005308);supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant Nos. Y2022005 and 2023008)
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2026年04期
  • 【分类号】TN248
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