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基于分子动力学研究温度对Ti/TiN体系中N扩散行为的影响

Effect of Temperature on Nitrogen Diffusion Behavior in Ti/TiN System using Molecular Dynamics Simulation

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【作者】 许伟春郭清远王文焱谢敬佩曲银化王丽娟代应杰秦文栋

【Author】 Xu Weichun;Guo Qingyuan;Wang Wenyan;Xie Jingpei;Qu Yinhua;Wang Lijuan;Dai Yingjie;Qin Wendong;Luoyang Sunrui Wanji Titanium Industry Co.,Ltd.;College of Materials Science and Engineering,Henan University of Science and Technology;State Key Laboratory of Light Superalloys;

【通讯作者】 谢敬佩;

【机构】 洛阳双瑞万基钛业有限公司河南科技大学材料科学与工程学院高温轻合金及应用技术全国重点实验室

【摘要】 基于分子动力学模拟方法,探究以TiN为扩散介质时,N原子在α-Ti基体中的扩散行为。分析温度对N原子扩散速率、扩散路径及扩散产物结构的调控机制。通过原子运动轨迹重构与空间分布统计,直观呈现N在Ti基体中的扩散迁移路径;利用径向分布函数和原子数密度分布分析,表征扩散产物的短程有序结构及浓度梯度演变,明确温度对N扩散行为的影响。结果表明:扩散过程中TiN/Ti界面处的N首先开动,Ti-N键断裂;扩散产物以α-Ti间隙固溶体为主,另有少量Ti3N、Ti2N化合物;扩散行为主要发生在1200 K以上,且随着温度的升高N扩散速率呈指数级增加,900 K以下时仅有少量N扩散到α-Ti结构间隙中,TiN结构相对稳定;1200 K时N的扩散系数为2.5×10-12 m2·s-1,N在TiN/Ti界面处的扩散激活能为0.39 eV。钛材生产过程中,将加工温度控制在900 K以下可有效抑制TiN夹杂中N扩散造成的影响。

【Abstract】 Using molecular dynamics simulation methods to investigate the diffusion behavior of nitrogen(N) atoms in α-Ti matrix when TiN was used as a diffusion medium. The regulatory mechanisms of temperature on the diffusion rate of N atoms, diffusion pathways, and the structure of diffusion products were analyzed. By reconstructing atomic motion trajectories and analyzing spatial distribution, the diffusion migration pathways of N in the Ti matrix were visually presented. Using radial distribution functions and atomic number density distribution analysis, the short-range ordered structure and concentration gradient evolution of diffusion products were characterized, clarifying the effect of temperature on the diffusion behavior of N. The results show that during diffusion, N atoms at the TiN/Ti interface are activated first, and Ti-N bonds break. The diffusion products are mainly α-Ti interstitial solid solution, with a small amount of Ti3N and Ti2N compounds. Diffusion behavior mainly occurs above 1200 K, with the N diffusion rate increasing exponentially as temperature rises. In contrast, only minimal N diffuses into the interstitial sites of the α-Ti structure below 900 K, and the TiN structure remains relatively stable. At 1200 K, the diffusion coefficient of N is 2.5×10-12 m2·s-1, and the diffusion activation energy of N at the TiN/Ti interface is 0.39 eV. In titanium production, controlling the processing temperature below 900 K can effectively mitigate the effects of N diffusion from TiN inclusions.

【基金】 河南省重大科技专项(231100230200)
  • 【文献出处】 钛工业进展 ,Titanium Industry Progress , 编辑部邮箱 ,2026年01期
  • 【分类号】TG146.23
  • 【下载频次】47
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