【摘要】 电镀铜技术当前被认为是推动异质结电池实现去银化目标的最优解决方案。在电镀铜技术的工艺流程中，蚀刻是指通过化学方法去除未覆盖铜栅线区域的种子层，从而确保电池的性能和稳定性。H₂O₂/H₂SO₄蚀刻液因成本低廉、对TCO膜影响小和低环境污染性等优势，成为电镀铜技术产业化道路上的重要选择。研究主要进行了两方面的工作，一方面，在确保铜种子层被彻底蚀刻且不对TCO膜造成任何损伤的前提下，确定了H₂O₂/H₂SO₄的浓度配比为4/3 g/L、5/4 g/L、6/5 g/L和7/6 g/L；另一方面，探究了Cu²⁺、安定剂LMS对H₂O₂/H₂SO₄蚀刻液蚀刻速率的影响。通过测试加入不同克重铜离子后的蚀刻液对硅片的蚀刻速率，得出在实际应用中，铜离子管控的量需小于16 g/L。通过对比有安定剂与无安定剂之间的蚀刻速率衰减量，未加安定剂的蚀刻液蚀刻速率衰减量大约是加入安定剂的3倍，充分证明了安定剂在抑制H₂O₂分解方面的显著效果。更多还原

【Abstract】 Copper electroplating technology is currently considered to be the optimal solution for advancing the goal of desilverization of heterojunction cells. In the process flow of copper plating technology, etching refers to the chemical removal of the seed layer that does not cover the area of the copper fingers, thus ensuring the performance and stability of the cell. The H₂ O₂/H₂ SO₄ etchant has emerged as a key candidate for the industrialization of copper electroplating, owing to its low cost, minimal impact on TCO films, and low environmental impact. This paper conducts two main studies. on the one hand, under the premise of ensuring that the copper seed layer is thoroughly etched and does not cause any damage to the TCO film, the concentration range of H₂ O₂/H₂ SO₄ is determined to be 4/3 g/L、5/4 g/L、6/5 g/L和7/6 g/L; on the other hand, the effects of Cu²⁺and stabilizer LMS on the etching rate of H₂ O₂/H₂ SO₄ etchant are investigated. By testing the etching rate of silicon wafers after adding different grams of copper ions, it is concluded that in practical applications, the amount of copper ions should be less than 16 g/L. By comparing the etching rate attenuation between the etching solution with stabilizers and without stabilizers, the etching rate attenuation of the etching solution without stabilizers is about three times of the etching rate with stabilizers, which proves that the stabilizers have a significant effect in inhibiting the decomposition of H₂O₂.更多还原