【摘要】 The rapid advancement of the Internet of Things has underscored the importance of advanced photodetection technologies, particularly for near-infrared（NIR） sensing and imaging. However, conventional materials such as In Ga As, and Hg Cd Te face significant challenges, such as complex fabrication with high costs and limited room-temperature NIR sensitivity. Here, we report the chemical vapor deposition（CVD）-driven epitaxial growth of wafer scale lead sulfide（Pb S） single-crystal films on Sr Ti O3（STO） substrates. The single-crystal films exhibit exceptional crystallinity with highly oriented domains alignment.By constructing an asymmetric Au-Cr/Pb S/In Zn O（IZO） structures, the devices were enabled with efficient photoresponse. The Schottky contact not only induces a substantial photovoltage under infrared light,breaking through the cryogenic operation limitation of traditional Pb-based devices, but also leads to sub-millisecond response(τ_rise/τ_fall= 0.57/0.68 ms). Through the synergistic integration of the highquality single-crystalline film with the asymmetric interfacial engineering, we achieve roomtemperature, zero-bias infrared imaging. As a result, the devices exhibit a specific detectivity D* of 9.8 × 10¹⁰cm Hz^1/2W^-1, offering a scalable pathway toward low-cost, uncooled infrared imaging systems and demonstrating significant potential for practical applications.更多还原

【Abstract】 The rapid advancement of the Internet of Things has underscored the importance of advanced photodetection technologies, particularly for near-infrared（NIR） sensing and imaging. However, conventional materials such as In Ga As, and Hg Cd Te face significant challenges, such as complex fabrication with high costs and limited room-temperature NIR sensitivity. Here, we report the chemical vapor deposition（CVD）-driven epitaxial growth of wafer scale lead sulfide（Pb S） single-crystal films on Sr Ti O3（STO） substrates. The single-crystal films exhibit exceptional crystallinity with highly oriented domains alignment.By constructing an asymmetric Au-Cr/Pb S/In Zn O（IZO） structures, the devices were enabled with efficient photoresponse. The Schottky contact not only induces a substantial photovoltage under infrared light,breaking through the cryogenic operation limitation of traditional Pb-based devices, but also leads to sub-millisecond response(τ_rise/τ_fall= 0.57/0.68 ms). Through the synergistic integration of the highquality single-crystalline film with the asymmetric interfacial engineering, we achieve roomtemperature, zero-bias infrared imaging. As a result, the devices exhibit a specific detectivity D* of 9.8 × 10¹⁰cm Hz^1/2W^-1, offering a scalable pathway toward low-cost, uncooled infrared imaging systems and demonstrating significant potential for practical applications.更多还原