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通过双功能添加剂改善薄膜形貌实现高性能锡基钙钛矿场效应晶体管(英文)

High-performance tin-based perovskite field-effect transistors realized by improving film morphology via bifunctional additives

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【作者】 张凯王雪张晓宇王海波郑伟涛张立军

【Author】 Kai Zhang;Xue Wang;Xiaoyu Zhang;Haibo Wang;Weitao Zheng;Lijun Zhang;Key Laboratory of Automobile Materials of Ministry of Education,School of Materials Science and Engineering,Jilin University;

【通讯作者】 王海波;

【机构】 Key Laboratory of Automobile Materials of Ministry of Education,School of Materials Science and Engineering,Jilin University

【摘要】 Tin-based perovskites have emerged as promising semiconductor materials for high-performance fieldeffect transistors(FETs). However, poor film quality of tin-based perovskites seriously impedes carrier transport and degrades operational stability of the FETs. In this study, we propose a bifunctional additive strategy employing 4-fluorophenethylamine acetate(FPEAAc) to regulate the crystallization of Sn-based perovskites, resulting in preferentially oriented, fully covered and large-grained perovskite films. The FPEA+cations induced the templating growth of perovskite octahedron, while Ac-anions retard the crystallization growth to promote uniform films. To further enhance grain size while maintaining pinholefree morphology, propylammonium acetate(PAAc) additive is introduced as an auxiliary additive to further delay crystal growth. The optimized FETs demonstrate a high hole mobility of ??40 cm2V-1s-1along with excellent operational stability. This work establishes a co-additive strategy that precisely regulates tin-based perovskite crystallization through templated growth coupled with retarded crystallization,offering novel insights into regulating the film growth of Sn-based perovskites, and thereby advancing the development of high-performance perovskite FETs.

【Abstract】 Tin-based perovskites have emerged as promising semiconductor materials for high-performance fieldeffect transistors(FETs). However, poor film quality of tin-based perovskites seriously impedes carrier transport and degrades operational stability of the FETs. In this study, we propose a bifunctional additive strategy employing 4-fluorophenethylamine acetate(FPEAAc) to regulate the crystallization of Sn-based perovskites, resulting in preferentially oriented, fully covered and large-grained perovskite films. The FPEA+cations induced the templating growth of perovskite octahedron, while Ac-anions retard the crystallization growth to promote uniform films. To further enhance grain size while maintaining pinholefree morphology, propylammonium acetate(PAAc) additive is introduced as an auxiliary additive to further delay crystal growth. The optimized FETs demonstrate a high hole mobility of ??40 cm2V-1s-1along with excellent operational stability. This work establishes a co-additive strategy that precisely regulates tin-based perovskite crystallization through templated growth coupled with retarded crystallization,offering novel insights into regulating the film growth of Sn-based perovskites, and thereby advancing the development of high-performance perovskite FETs.

【基金】 financially supported by the National Natural Science Foundation of China (62321166653 and 62125402);the Natural Science Foundation of Jilin Province (20230101105JC)
  • 【文献出处】 Science Bulletin ,科学通报(英文版) , 编辑部邮箱 ,2026年01期
  • 【分类号】TB383.2;TN386
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