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通过双功能添加剂改善薄膜形貌实现高性能锡基钙钛矿场效应晶体管(英文)
High-performance tin-based perovskite field-effect transistors realized by improving film morphology via bifunctional additives
【摘要】 Tin-based perovskites have emerged as promising semiconductor materials for high-performance fieldeffect transistors(FETs). However, poor film quality of tin-based perovskites seriously impedes carrier transport and degrades operational stability of the FETs. In this study, we propose a bifunctional additive strategy employing 4-fluorophenethylamine acetate(FPEAAc) to regulate the crystallization of Sn-based perovskites, resulting in preferentially oriented, fully covered and large-grained perovskite films. The FPEA+cations induced the templating growth of perovskite octahedron, while Ac-anions retard the crystallization growth to promote uniform films. To further enhance grain size while maintaining pinholefree morphology, propylammonium acetate(PAAc) additive is introduced as an auxiliary additive to further delay crystal growth. The optimized FETs demonstrate a high hole mobility of ??40 cm2V-1s-1along with excellent operational stability. This work establishes a co-additive strategy that precisely regulates tin-based perovskite crystallization through templated growth coupled with retarded crystallization,offering novel insights into regulating the film growth of Sn-based perovskites, and thereby advancing the development of high-performance perovskite FETs.
【Abstract】 Tin-based perovskites have emerged as promising semiconductor materials for high-performance fieldeffect transistors(FETs). However, poor film quality of tin-based perovskites seriously impedes carrier transport and degrades operational stability of the FETs. In this study, we propose a bifunctional additive strategy employing 4-fluorophenethylamine acetate(FPEAAc) to regulate the crystallization of Sn-based perovskites, resulting in preferentially oriented, fully covered and large-grained perovskite films. The FPEA+cations induced the templating growth of perovskite octahedron, while Ac-anions retard the crystallization growth to promote uniform films. To further enhance grain size while maintaining pinholefree morphology, propylammonium acetate(PAAc) additive is introduced as an auxiliary additive to further delay crystal growth. The optimized FETs demonstrate a high hole mobility of ??40 cm2V-1s-1along with excellent operational stability. This work establishes a co-additive strategy that precisely regulates tin-based perovskite crystallization through templated growth coupled with retarded crystallization,offering novel insights into regulating the film growth of Sn-based perovskites, and thereby advancing the development of high-performance perovskite FETs.
【Key words】 Sn-based perovskites; Field-effect transistors; Bifunctional additives; Film growth; Hole mobility;
- 【文献出处】 Science Bulletin ,科学通报(英文版) , 编辑部邮箱 ,2026年01期
- 【分类号】TB383.2;TN386