【摘要】 <正>The pursuit of high speed, large capacity, and low power consumption of electronic and photonic systems drives the long-term tendency of device miniaturization. The gate width in typical transistors has been reduced to several nanometers in 7 to 2 nm photolithographic processes, while nano-electronic devices from twodimensional(2D) materials possess even smaller critical dimensions. For example, Desai et al. [1] reported a gate length of 1 nm that overcame the critical barriers of quantum tunneling and electrostatic control in ultra-scaled silicon transistors. Furthermore,on-chip quantum devices require manipulation of excitons [2],phonons [3], surface plasmons [4], and spins [5] at the single-atom level. Gao et al.更多还原