【摘要】 激光辅助芯片剥离及巨量转移是实现Micro LED显示器高效、精确制造的核心技术。在剥离过程中，激光照射蓝宝石衬底上的GaN基Micro LED芯片，诱发局部加热和光化学反应并生成氮气，热气流的爆破压力驱动GaN与衬底分离，从而实现芯片向承接基板动态释放层（DRL）的剥离。在巨量转移阶段，激光辐照DRL诱发光化学效应、光热效应与机械效应，确保每颗芯片能被准确、高效地放置。深入理解激光与材料的作用机制对于优化Micro LED芯片剥离和巨量转移工艺至关重要。因此，本综述详细阐述了GaN基Micro LED芯片剥离和巨量转移过程中激光与材料的相互作用机制，包括芯片剥离过程中激光作用于GaN的机理，以及芯片巨量转移过程中激光作用于DRL的多种机制。此外，本文还探讨了激光参数对芯片剥离和巨量转移性能的影响规律。更多还原

【Abstract】 Significance The evolution of display technology has profoundly transformed social production and daily life.Following the decline of cathode ray tube （CRT） displays due to their inability to meet modern demands for low power consumption and high resolution,liquid crystal displays （LCD） and organic light-emitting diode （OLED） displays have become the dominant technologies.However,with the growing pursuit of high-performance displays,Micro LED technology has emerged as a revolutionary alternative,offering remarkable advantages in resolution,response speed,brightness,and color accuracy.These displays consist of numerous Ga N-based red,green,and blue （RGB） Micro LED chips,each functioning as a self-luminous element.Despite its promising application prospects,Micro LED technology faces significant challenges in mass production.The small feature size of Micro LED chips renders traditional packaging methods such as chip-on-board （COB） and surface-mount device （SMD） inappropriate,as achieving both precision and efficiency in transferring chips from growth substrates to driver circuit boards remains a formidable task.Laser-assisted chip lift-off and mass transfer have emerged as core technologies to address these bottlenecks,enabling efficient and precise manufacturing of Micro LED displays.The performance of these laser-based processes directly impacts the yield and commercial viability of Micro LED devices.A deep understanding of the interaction mechanisms between lasers and materials（particularly Ga N and dynamic release layers,DRL） is crucial for optimizing process parameters,improving transfer efficiency and yield,and advancing the commercialization of Micro LED technology.As the demand for large-area,high-resolution,and low-power-consumption displays continues to rise in applications such as smart devices,wearables,and large-scale visualization systems,the development of reliable laser-assisted transfer technologies becomes increasingly critical.This review provides a comprehensive analysis of the fundamental mechanisms and parameter influences,offering valuable insights for researchers and industry professionals to overcome current technical barriers and promote the widespread adoption of Micro LED displays.Progress This review focuses on laser lift-off and mass transfer technologies for Ga N-based Micro LED chips,with a core focus on the interaction mechanisms between lasers and materials,as well as the influence of laser parameters.It first introduces the background of display technology iteration,pointing out that Micro LED has become a research hotspot due to its performance advantages.However,traditional transfer methods face challenges in precision and efficiency,and laser-assisted technology serves as a core solution （Fig.1（b））.In the section on chip lift-off,it explains that lasers penetrate the sapphire substrate to act on Ga N,decomposing GaN into Ga and N₂ through either a single-photon mechanism （157??355 nm nanosecond-microsecond lasers） or a two-photon mechanism （520 nm femtosecond lasers） to achieve lift-off （Fig.1（a）,Fig.5（a）??（c））.It also analyzes interface evolution,such as how high temperatures cause Ga N surface roughness and how femtosecond lasers reduce damage （Fig.5（d）??（j））,along with the effects of laser wavelength,pulse width,and energy density on lift-off （Fig.6（a）??（j））.In the mass transfer section,it details the functions and types of DRL （Table 1）,as well as four interaction mechanisms between lasers and DRL:ablation/blister formation （Fig.7（b）??（f）,Fig.8（a）??（d））,induced microstamping （Fig.9（a）??（c））,laser-induced physical response differences （Fig.10（a）??（c））,and laser-induced SMP deformation （Fig.11（a）??（f））.Additionally,it discusses the impacts of laser parameters （wavelength,pulse width,energy density）and transfer distance on transfer performance （Fig.13（a）??（l））.Finally,it summarizes the key aspects of the technology and outlines future optimization directions.Conclusions and Prospects Laser-assisted lift-off and mass transfer are pivotal for Micro LED commercialization.Ultraviolet nanosecond-to-picosecond lasers enable single-photon decomposition of Ga N for lift-off,while visible femtosecond lasers achieve twophoton decomposition with minimal damage.For mass transfer,diverse DRL materials and laser interaction mechanisms optimize transfer yield and programmability.Short wavelengths,short pulse widths,appropriate energy densities,and small transfer distances are key to efficient,low-damage processing.Future research should focus on the synergistic optimization of laser parameters and DRL materials to meet the demands of large-area,high-density displays.Developing real-time monitoring and adaptive control technologies will enhance process precision and stability,while integrating novel 2D materials may further improve lift-off efficiency and reliability.These advancements will drive the widespread commercial application of Micro LED displays and foster innovation in next-generation display technologies.更多还原