【摘要】 InAs/GaInSb Ⅱ类超晶格材料在长波与甚长波红外探测器领域展现出显著优势。通过优化分子束外延生长参数和界面调控技术，在GaSb再构转变温度下成功制备了50周期的10 ML InAs/7 ML Ga_0.75In_0.25Sb短周期超晶格材料。利用高分辨率X射线衍射（HRXRD）表征，测得该超晶格的晶格常数为6.108??，周期厚度为53.53??，与理论设计值的偏差小于0.2%，且与GaSb衬底的失配度仅为0.197%。原子力显微镜（AFM）测试表明材料表面均方根粗糙度（RMS）为1.67??，光致发光（PL）谱测得带隙为89.9 meV。在此基础上外延得到了12 ML InAs/5 ML Al_0.8In_0.2Sb超晶格势垒材料，与GaSb衬底失配度为0.067%。实验结果表明，所制备的10 ML InAs/7 ML Ga_0.75In_0.25Sb超晶格以及12 ML InAs/5 ML Al_0.8In_0.2Sb超晶格与GaSb衬底具有较好的晶格匹配性，其多级次级衍射峰特征和优异的界面质量进一步证实了材料结构的完整性。这些发现为高性能红外探测器的开发提供了重要的材料基础。更多还原

【Abstract】 InAs/GaInSb Type-Ⅱ superlattice（T2SL） materials exhibit significant advantages in long-wave（LWIR） and very long-wave infrared（VLWIR） detectors. By optimizing molecular beam epitaxy（MBE） growth parameters and interface control techniques, a 50-period short-period superlattice（SL） structure composed of 10 monolayer（ML） InAs/7 ML Ga_{0. 75}In_{0. 25}Sb was successfully grown at the GaSb reconstruction transition temperature. High-resolution X-ray diffraction（HRXRD） characterization revealed a lattice constant of 6. 108 ?? and a period thickness of 53. 53 ?? for the superlattice, with deviations from theoretical design values below 0. 2%. The lattice mismatch with the GaSb substrate was only 0. 197%. Atomic force microscopy（AFM） measurements demonstrated a root mean square（RMS） surface roughness of 1. 67 ??, while photoluminescence（PL） spectroscopy indicated a bandgap of 89. 9 meV. Furthermore, a 12 ML InAs/5 ML Al_{0. 8}In_{0. 2}Sb superlattice barrier material was epitaxially grown, exhibiting a lattice mismatch of 0. 067% with the GaSb substrate. Experimental results confirm that both 10 ML InAs/7 ML Ga_{0. 75}In_{0. 25}Sb and 12 ML InAs/5 ML Al_{0. 8}In_{0. 2}Sb superlattices exhibit excellent lattice compatibility with the GaSb substrate. The presence of multiple satellite diffraction peaks and superior interface quality further validate the structural integrity of the materials. These findings provide a critical material foundation for the development of high-performance infrared detectors.更多还原