【摘要】 以醋酸铜和五水硫代硫酸钠为前驱体，通过化学液相沉淀法制备了Cu₂S颗粒。随后采用溶液共混-旋涂工艺，将Cu₂S颗粒分散于聚乙烯醇（PVA）基体中，制备了Ag/PVA-Cu₂S/Ti结构聚合物基忆阻器。通过X射线衍射对复合功能层进行物相表征，并测试了器件的电流-电压特性。结果表明，PVA链上羟基与Cu₂S颗粒表面存在氢键相互作用，有利于形成稳定的电荷陷阱中心。该器件在0.7 V低工作电压下表现出约2.5的开关比，并具有一定的循环耐受性。I-V曲线拟合分析表明，空间电荷限制电流效应是主导阻变过程的主要电荷输运机制。本研究为低成本、可溶液加工的低功耗聚合物忆阻器提供了实验依据。更多还原

【Abstract】 Cu₂S particles were prepared via a chemical liquid-phase precipitation method using copper acetate and sodium thiosulfate pentahydrate as precursors. Subsequently, a polymer-based memristor with Ag/PVA-Cu₂S/Ti structure was fabricated by dispersing the as-prepared Cu₂S particles into a poly（vinyl alcohol）（PVA） matrix through a solution blending and spin-coating process. The phase composition of the composite functional layer was characterized by X-ray diffraction, and the current-voltage characteristics of the device were measured. The results indicated that hydrogenbonding interactions between the hydroxyl groups on PVA chains and the surface of Cu₂S particles facilitated the formation of stable charge trapping centers. The device exhibited an ON/OFF ratio of approximately 2.5 at a low operating voltage of 0.7 V, along with moderate cycling endurance. Analysis of the I-V curves revealed that the space-charge-limited current effect was the dominant charge transport mechanism governing the resistive switching behavior. This work provided an experimental basis for the development of low-cost, solution-processable, and low-power polymer-based memristors.更多还原