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Overcoming metal ion penetration in dynamic memristor-Geiger-mode avalanche photodiode integration for high-speed photon counting

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【作者】 杨玉波赵吉哲郑纪元刘胤洁王潇然刘北辰郭安然于博屹温博宇谢亦轩封晓宇刘勇攀郝智彪李洪涛韩彦军王健熊兵孙长征甘霖罗毅汪莱

【Author】 Yubo Yang;Jizhe Zhao;Jiyuan Zheng;Yinjie Liu;Xiaoran Wang;Beichen Liu;Anran Guo;Boyi Yu;Boyu Wen;Yixuan Xie;Xiaoyu Feng;Yongpan Liu;Zhibiao Hao;Hongtao Li;Yanjun Han;Jian Wang;Bing Xiong;Changzheng Sun;Lin Gan;Yi Luo;Lai Wang;Department of Electronic Engineering, Tsinghua University;Beijing National Research Center for Information Science and Technology, Tsinghua University;Department of Solid State Image Sensor, CETC No.44 Research Institute, CETC Chips Technology Group Co., Ltd.;State Key Laboratory of Widegap Semiconductors Optoelectronic Materials and Technologies, Tsinghua University;

【通讯作者】 郑纪元;汪莱;

【机构】 Department of Electronic Engineering, Tsinghua UniversityBeijing National Research Center for Information Science and Technology, Tsinghua UniversityDepartment of Solid State Image Sensor, CETC No.44 Research Institute, CETC Chips Technology Group Co., Ltd.State Key Laboratory of Widegap Semiconductors Optoelectronic Materials and Technologies, Tsinghua University

【摘要】 Dynamic memristors(DMs) coupled with Geiger-mode avalanche photodiodes(GmAPDs) break through the resistor capacitor(RC) constraints of passive quenching,yet demand integration to realize miniaturization and scalable fabrication,which is challenged by the penetration of active metal ions of DM into GmAPD’s semiconductor materials.This work introduces a practical method to tackle the issue through a dense alumina barrier layer deposition and a meticulously designed DM electrode arrangement.As a result,the dark current of GmAPD is decreased by an order of magnitude,and GmAPD resumes its reliable avalanche pulse response.The recovery time is reduced from microseconds to tens of nanoseconds(30× improvement) compared to fixed resistor quenching.The detector achieves a 10-fold improvement in counting rate at a frequency of 25 MHz.This architecture paves the way for scalable silicon photomultipliers(SiPMs) with enhanced sensitivity and timing resolution,critical for LiDAR and quantum communication.

【Abstract】 Dynamic memristors(DMs) coupled with Geiger-mode avalanche photodiodes(GmAPDs) break through the resistor capacitor(RC) constraints of passive quenching,yet demand integration to realize miniaturization and scalable fabrication,which is challenged by the penetration of active metal ions of DM into GmAPD’s semiconductor materials.This work introduces a practical method to tackle the issue through a dense alumina barrier layer deposition and a meticulously designed DM electrode arrangement.As a result,the dark current of GmAPD is decreased by an order of magnitude,and GmAPD resumes its reliable avalanche pulse response.The recovery time is reduced from microseconds to tens of nanoseconds(30× improvement) compared to fixed resistor quenching.The detector achieves a 10-fold improvement in counting rate at a frequency of 25 MHz.This architecture paves the way for scalable silicon photomultipliers(SiPMs) with enhanced sensitivity and timing resolution,critical for LiDAR and quantum communication.

【基金】 supported by the National Science and Technology Major Project (No. 2021ZD0109903);the National Natural Science Foundation of China (Nos. 62175126, T2322016, 62235011, 62225405, 62350002, 61991443, 62127814, 62235005, and 61927811);the National Key Research and Development Program of China (Nos. 2021YFA0716400 and 2024YFB3612200);the Beijing Major Science and Technology Project (No. Z241100004224016);the Centre of Nanofabrication (Tsinghua University);National Key Laboratory of Laser Spatial Information Foundation (No. LSI2024JCKY03);the Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2026年04期
  • 【分类号】TN60;TN312.7
  • 【下载频次】3
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