【摘要】 为解决屏蔽栅沟槽型金属氧化物半导体场效应晶体管（Shielded gate trench metal-oxide-semiconductor field-effect transistor, SGT-MOSFET）功率导通电阻与击穿电压之间的相互制约关系，设计兼具高击穿电压与低导通电阻的器件。首先使用Sentaurus TCAD仿真软件构建80 V上下结构的SGT基础模型，并探讨了SGT-MOS??FET生产制造中的关键参数对其电学性能的影响。然后提出一种新型类保龄球型SGT结构（Bowling-SGT），该结构将接触孔到栅极沟槽的距离增加0.2μm，相比传统SGT提升了40%，有效缩小了器件尺寸，实现25 V SGT0.55μm节距（Pitch）的突破，显著降低了沟道电阻。预计全平台SGT的比导通电阻可降低13%以上。更多还原

【Abstract】 To address the trade-off between power on-resistance and breakdown voltage in shield??ed gate trench metal-oxide-semiconductor field-effect transistors(SGT-MOSFETs), the device with both high breakdown voltage and low on-resistance was aimed to design in this study. Firstly, the Sen??taurus TCAD simulation software was used to construct an 80 V vertical structure SGT basic model, and the influence of several key parameters in the manufacturing process of SGT-MOSFETs on their electrical performance was discussed. Subsequently, a novel bowling-like SGT structure(BowlingSGT) was proposed. This structure increases the distance from the contact hole to the gate trench by 0.2 μm, which is a 40% improvement compared to the traditional SGT. This effectively reduces the device size, achieves a breakthrough in the 0.55 μm pitch of 25 V SGT, and significantly lowers the channel resistance. It is expected that the specific on-resistance of the full-platform SGT can be re??duced by more than 13%.更多还原