【摘要】 SiC MOSFET由于栅氧化层较厚，在空间辐射环境中对电离总剂量效应敏感。测量辐照前后器件的阈值电压(V_TH)变化是评估其抗总剂量特性的重要手段。本文通过开展不同阈值电压测试方法的比较，分析认为由下扫I-V曲线提取器件阈值电压更为准确。基于该阈值电压提取方法，对比分析了辐照偏置、辐照温度、辐照剂量率对器件总剂量特性的影响规律。分析认为栅极偏置可加剧电子-空穴对的分离并减弱其复合过程，导致高密度的氧化物陷阱电荷积累；高温辐照可加剧空穴输运及热发射退火过程，导致陷阱电荷积累减少；同时，SiC MOS??FET几乎不存在剂量率效应，认为器件界面处Si―H键密度较低，低剂量率辐照不会加剧H释放过程。更多还原

【Abstract】 Due to the thick gate oxide layer, SiC MOSFETs are sensitive to the total ionizing dose（TID） effect in space radiation environments. Measuring the variation in the threshold voltage(V_TH) of devices before and after irradiation is a crucial means for evaluating its TID hardness. Through a comparison of different V_TH measurement methods, this work reveals that extracting the V_TH from the down-sweep I-V curve is more accurate. Based on this V_TH extraction method, the influ??ences of irradiation bias, irradiation temperature and irradiation dose rate on the TID characteristics of devices are compared and analyzed. The analysis indicates that gate bias can enhance the separation of electron-hole pairs and suppress their recombination process, leading to a high density of oxide trapped charge accumulation. High-temperature irradiation promotes hole transport and thermal emission an??nealing, thereby reducing trapped charge accumulation. Furthermore, SiC MOSFETs exhibit almost no dose rate effect, which is attributed to the low density of Si―H bonds at the device interface. As a result, low dose rate irradiation does not intensify the hydrogen release process.更多还原