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SiC光触发晶闸管与UV LED合封特性研究

Study on Sealing Characteristics of SiC Light Triggered Thyristor and UV LED

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【作者】 蒲旭辉王曦李志强杨勇刘静王馨梅蒲红斌

【Author】 PU Xuhui;WANG Xi;LI Zhiqiang;YANG Yong;LIU Jing;WANG Xinmei;PU Hongbin;Department of Electronic Engineering, Xi’an University of Technology;Institute of Electronic Engineering, China Academy of Engineering Physics;

【通讯作者】 王曦;

【机构】 西安理工大学电子工程系中国工程物理研究院电子工程研究所

【摘要】 通过合封的方式将碳化硅(SiC)光触发晶闸管与紫外(Ultraviolet, UV)发光二极管(Light??emitting diode,LED)进行集成,试制了SiC光触发晶闸管与UV LED的合封模块样件,并对其特性进行了测试与分析。结果显示,合封样件的阳极阻断电压大于8 500 V,阳极正向开启电压为2.8 V,栅极正向开启电压为3 V。在正向电流为20 A时,合封样件的阳极通态压降仅3.6 V。在2 000 V母线电压下,合封模块可通过栅控开通,阳极开通时间为8.5 ns,对应的dv/dt(器件电压随时间的变化率)与di/dt(器件电流随时间的变化率)分别为188 kV/μs与2.68 kA/μs。

【Abstract】 In this work, silicon carbide(SiC) light triggered thyristor and ultraviolet(UV) light??emitting diode(LED) were integrated by means of sealing. The sealing module samples of SiC light triggered thyristor and UV LED were trial??produced, and their characteristics were tested and an??alyzed. The results show that the anode blocking voltage of the sealed sample is greater than 8 500 V, the anode forward opening voltage is 2.8 V, and the gate forward opening voltage is 3 V. When the forward current is 20 A, the anode on??state voltage drop of the sealed sample is only 3.6 V. Under the 2 000 V bus voltage, the sealing module can be turned on by gate control. The anode turn??on time is 8.5 ns, and the corresponding dv/dt(the time derivative of the voltage across the device) and di/dt(the time derivative of the device current) are 188 kV/μs and 2.68 kA/μs, respectively.

【关键词】 晶闸管光触发发光二极管碳化硅
【Key words】 thyristorlight triggeringlight emitting diodeSiC
【基金】 国家自然科学基金资助项目(62574164,62474140,52377197,62174135);中国博士后科学基金资助项目(2025MD784084);陕西省重点研发计划项目(2025CY-YBXM-146);陕西省教育厅青年创新团队项目(23JP101);陕西省教育厅自然科学专项项目(21JK0794)
  • 【文献出处】 固体电子学研究与进展 ,Research & Progress of SSE , 编辑部邮箱 ,2026年02期
  • 【分类号】TN312.8;TN34
  • 【下载频次】16
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