【摘要】 基于4H型碳化硅（4H??silicon carbide,4H??SiC）的NPN结构双极型辐射探测器已被证实可实现10倍的内增益功能，然而受限于SiC材料载流子迁移率寿命积，该类型探测器在获取更高增益方面存在一定困难。本文在NPN结构基础上提出一种优化PN~-PN辐射探测器结构，该结构器件可看作NPN、PNP结构器件级联，可进一步提升探测器增益特性。计算机辅助设计（Technology computer??aided design, TCAD）Sentaurus仿真模拟结果表明，基于4H??SiC的优化PN~-PN结构辐射探测器可获得2倍于NPN结构的增益特性，且恢复时间为31.37 ms。此外，讨论了该优化PN~-PN结构辐射探测器的增益影响因素和器件工作模式。更多还原

【Abstract】 4H??silicon carbide(4H??SiC)??based NPN bipolar radiation detectors have achieved an internal gain of 10. However, enhancing the gain property remains challenging due to the constraints imposed by the product of carrier mobility and lifetime of the SiC material. To address this issue and obtain a higher internal gain, an optimized PN~-PN??based radiation detector was proposed in this pa??per, which could be interpreted as a cascaded NPN-PNP topological structure. Technology computer??aided design(TCAD) Sentaurus simulations demonstrate that the optimized PN~-PN detec??tor exhibits a gain twice that of the NPN detector, with a recovery time of 31.37 ms. Additionally, the gain??limiting factors and operational modes of the optimized PN~-PN radiation detector were thorough??ly discussed.更多还原