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一种毫米波8波束硅基芯片测试校准方法

A calibration method for millimeter-wave 8-beam silicon chip testing

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【作者】 张凯刘帅

【Author】 ZHANG Kai;LIU Shuai;Southwest Research Institute of Electronic Technology;School of Integrated Circuits, Tsinghua University;

【通讯作者】 张凯;

【机构】 西南电子技术研究所清华大学集成电路学院

【摘要】 针对星载毫米波硅基8波束芯片在板测试(Chip on Board, CoB)的校准需求,提出了一种改进型直通-反射-传输线(Thru-Reflect-Line, TRL)校准方法。该方法根据测试载板射频接口繁多且走线非对称的特点,采用开路支节等效电容修正反射校准件(Reflect)的手段,有效提高了校准精度,并可将校准参考面从同轴接头处沿任意走线推移至芯片对应端口位置。通过在K/Ka频段分别制作校准件实物并实测验证,15~25 GHz频段内校准后直通插损误差小于0.05 dB,回波损耗优于-35 dB;25~35 GHz频段内校准后直通插损误差小于0.08 dB,回波损耗优于-30 dB。电容补偿前后直通插损幅度、相位误差分别改善约0.1 dB和5°,回波损耗改善约9 dB。

【Abstract】 An improved thru-reflect-line(TRL) calibration method was proposed to meet the calibration requirements for chip-on-board(COB) testing of spaceborne millimeter-wave 8-beam silicon chips. Calibration accuracy was enhanced by correcting the open-stub equivalent capacitance of the asymmetric reflect kit in the multi-port test board. The reference plane was extended from coaxial interfaces to chip pads along transmission lines with arbitrary routing. K/Ka-band calibration kits were fabricated and measured. Insertion loss errors are below 0.05 dB over 15-25 GHz and 0.08 dB over 25-35 GHz, with return loss better than-35 dB and-30 dB in the two bands, respectively. After capacitance compensation, insertion loss amplitude and phase errors are reduced by 0.1 dB and 5°, and return loss is improved by 9 dB.

【关键词】 8波束硅基芯片非对称电容补偿TRL
【Key words】 8-beamsilicon chipasymmetriccapacitance compensationTRL
  • 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2026年05期
  • 【分类号】TN407;TN821.8
  • 【下载频次】16
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