【摘要】 与压阻式传感器相比，微机电系统(MEMS)电容式压力传感器具有精度和灵敏度高的优势，但其响应特性存在较大非线性的弱点。虽然接触电容式压力敏感结构对此有所改善，但却带来严重的迟滞问题。为此，基于线接触电容式压力敏感结构，对电容式压力敏感芯片进行了设计。利用这种线接触结构使其极板接触面积趋近于零，从而可使接触式传感器超常的迟滞得到大幅降低，同时还显著扩大了其线性响应范围。仿真结果表明，所设计量程为150 kPa的压力敏感芯片线性响应范围为22～150 kPa,非线性度为0.72%FS,灵敏度为0.008 1 pF/kPa。与普通接触式压力敏感结构相比，其线性响应范围扩大到10倍以上。更多还原

【Abstract】 Compared to piezoresistive sensors, micro-electromechanical system(MEMS) capacitive pressure sensors have advantages in higher accuracy and sensitivity, but there is the weakness of significant nonlinearity in its response characteristics. Although touch mode capacitive pressure sensitive structures improve this situation, they introduce severe hysteresis. To address this, a capacitive pressure sensitive chip was designed based on a line-touch mode capacitive pressure sensitive structure. This line-touch mode structure minimizes electrode contact area to near zero, substantially reducing the excessive hysteresis typical of touch sensors while significantly expanding the linear response range. Simulation results indicate that the designed pressure sensitive chip with a 150 kPa measurement range exhibits a linear response range of 22-150 kPa, nonlinearity of 0.72%FS and sensitivity of 0.008 1 pF/kPa. Compared to conventional touch mode pressure sensitive structures, its linear response range expands by more than 10 times.更多还原