【摘要】 GaN高电子迁移率晶体管功率放大器芯片的热管理及可靠性评估，对于高功率微波系统的实际应用具有重要意义。文章系统分析了GaN芯片衬底的形成方法，比较了不同衬底材料的优缺点。针对微波电路设计中的典型应用场景，设计多种裸芯片贴装方案，并结合GaN、SiC和金刚石芯片、不同转接板及粘接材料的相关特性，进行热-力耦合分析，以获取芯片在工作条件下的温度分布和热力学响应。同时考虑芯片转接板等本身的材料热阻、芯片与转接板等之间的界面热阻以及粘接工艺条件等关键因素，系统研究转接板材料、厚度及粘接材料对芯片结温和应力分布的影响。结果表明，这些因素在芯片散热效率和长期可靠性中起决定性作用。该研究为GaN功率放大器芯片的衬底材料选择、转接板结构设计及热管理优化提供可靠的数据支撑和定量参考，对提升高功率微波器件的散热性能和运行可靠性具有重要的指导意义。更多还原

【Abstract】 The thermal management and reliability of GaN high-electron-mobility transistor power amplifier chips are critical for high-power microwave systems. This study analyzes substrate-formation methods and compares different materials. Several bare-die packaging schemes are designed for typical microwave applications, and thermal-mechanical coupling simulations are performed considering GaN, SiC, and diamond chips, as well as various carrier boards and bonding materials. The temperature distribution and stress response under the operating conditions are obtained, and key factors such as the carrier-board thermal resistance, interfacial resistance, and bonding processes are included. Results show that the substrate and carrier-board properties, thickness, and bonding materials significantly affect the junction temperature, stress distribution, and long-term reliability. This study provides quantitative data and design guidance for selecting substrates, optimizing the carrier structure, and improving thermal management, thereby offering valuable references for enhancing the performance and reliability of high-power microwave devices.更多还原