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Unique high-energy excitons in two-dimensional transition metal dichalcogenides

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【作者】 高永盛李远征刘为振闫楚欣王庆彬辛巍徐海阳刘益春

【Author】 Yongsheng Gao;Yuanzheng Li;Weizhen Liu;Chuxin Yan;Qingbin Wang;Wei Xin;Haiyang Xu;Yichun Liu;State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University;

【通讯作者】 李远征;徐海阳;刘益春;

【机构】 State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University

【摘要】 Two-dimensional(2D) transition metal dichalcogenides(TMDs), endowed with exceptional light–matter interaction strength, have become a pivotal platform in advanced optoelectronics, enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices. In contrast to the narrowband absorption characteristics of conventional band-edge excitons, which are limited by the bandgap energy, highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects, but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics. This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure, excitonic characteristics, and optical properties. Subsequently, we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally, the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.

【Abstract】 Two-dimensional(2D) transition metal dichalcogenides(TMDs), endowed with exceptional light–matter interaction strength, have become a pivotal platform in advanced optoelectronics, enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices. In contrast to the narrowband absorption characteristics of conventional band-edge excitons, which are limited by the bandgap energy, highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects, but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics. This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure, excitonic characteristics, and optical properties. Subsequently, we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally, the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.

【基金】 Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars (Grant No. 52025022);the National Natural Science Foundation of China (Grant Nos. 62574038, 12474421, 62275045, and 12074060);the National Key R&D Program of China (Grant No. 2023YFB3610200);the Fund from Jilin Province (Grant Nos. JJKH20241413KJ and 20240601049RC)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2025年09期
  • 【分类号】O469
  • 【下载频次】8
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