【摘要】 激光二极管由于载流子泄漏严重,在波导区域发生非辐射复合,进而降低了输出功率和电光转换效率。本文设计了一种新型外延结构,通过在有源区两侧势垒和波导层之间分别插入n-Ga_0.55In_0.45P和p-GaAs_0.6P_0.4材料,调控能带结构,增大了阻挡载流子泄漏的势垒高度,抑制了载流子泄漏。研究结果表明,相较于传统结构器件,泄漏电流密度降低了87.71%。在25℃注入电流密度为5 A/cm²时,新型外延结构的非辐射复合电流密度降低至37.411 A/cm²,输出功率达12.80 W,电光转换效率达78.24%。此外,在5℃～65℃温度变化范围内,中心波长的温漂系数为0.206 nm/℃,阈值电流随温度变化的拟合直线的斜率为0.00113。本文所设计结构为制备高功率激光二级管提供了理论依据。更多还原

【Abstract】 There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure which suppresses carrier leakage by inserting n-Ga0.55In0.45P and p-GaAs0.6P0.4 between barriers and wave guide layers,respectively,to modulate the energy band structure and to increase the height of barrier.Th results show that the leakage current density reduces by 87.71%,compared to traditional structure.The non radiative recombination current density of novel structure reduces to 37.411 A/cm2,and the output powe reaches 12.80 W with wall-plug efficiency of 78.24% at an injection current density 5 A/cm2 at room temper ature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃ at the temperatur range from 5℃ to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.更多还原